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Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V PowerDI5060
- Series：-
- Mfr：Diodes Incorporated
- Package：Bulk
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：84A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：5.5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：123 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：4777 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.95W (Ta), 3.57W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
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Overview
The DMP27M1UPSW-13 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source voltage (BVDSS) of -20V and a continuous drain current (ID) of -84A at +25°C. The device exhibits a maximum on-resistance (RDS(ON)) of 5.5mΩ at VGS = -10V and 7.0mΩ at VGS = -4.5V. Operating temperatures range from -55°C to +150°C.
Feature Summary
- Thermally efficient PowerDI5060-8 package with a profile under 1.1mm for thin applications
- Low RDS(ON) to minimize on-state power losses
- Fast switching speed supported by low input capacitance
- Lead-free finish compliant with RoHS standards
Applications
- DC-DC Converters
- Load Switches
- Power Management Systems
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging configuration containing 2,500 units per reel. Confirm that the component meets the required Halogen and Antimony-free 'Green' device specifications as defined by the manufacturer's quality definitions before finalizing procurement orders.
Selection Notes
Select this component when designing circuits requiring high current handling up to 84A within a compact form factor. Ensure the gate drive voltage aligns with the specified thresholds for optimal RDS(ON) performance. Evaluate thermal management requirements based on the junction-to-case resistance values provided in the datasheet for your specific PCB layout.
Part Context
This part belongs to the DMP27MU series of advanced P-channel MOSFETs designed for high-efficiency power conversion. It utilizes Diodes Incorporated's proprietary PowerDI technology to deliver superior thermal dissipation compared to traditional packages. The device is engineered to balance low conduction losses with rapid switching capabilities.
Replacement Considerations
Consult official Diodes Incorporated documentation for verified substitute part numbers. Cross-reference pin configurations and electrical parameters carefully when evaluating alternative components.
