ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V POWERDI5060
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：84A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：5.5mOhm @ 15A, 10V
- Vgs(th) (Max) @ Id：1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：123 nC @ 10 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：4777 pF @ 10 V
- FET Feature：-
- Power Dissipation (Max)：1.95W (Ta), 3.57W (Tc)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount, Wettable Flank
- Supplier Device Package：PowerDI5060-8 (Type UX)
- Package / Case：8-PowerTDFN
Download product information
Overview
The DMP27M1UPSWQ-13 is a single P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a PowerDI5060-8 surface-mount package. The device features a drain-source breakdown voltage (Vds) of 40 V and supports a continuous drain current (Id) of 10.3 A. Key electrical characteristics include a maximum on-resistance (Rds On) of 18 mOhms, a gate-source voltage rating of ±20 V, and a threshold voltage (Vgs th) of 1 V. Additional parameters include a gate charge (Qg) of 68.6 nC, power dissipation (Pd) of 2.1 W, and an operating temperature range from -55 °C to +150 °C.
Feature Summary
- Single P-channel configuration for high-side switching applications
- Low on-resistance design for efficient power management
- Enhancement mode operation with standard logic-level gate drive compatibility
Applications
- Power distribution circuits
- High-side load switches
- Battery protection modules
Procurement Notes
Verify the specific suffix 'Q' indicates automotive or qualified grade requirements if applicable to your design. Confirm the PowerDI5060-8 footprint matches your PCB layout constraints. Ensure thermal management strategies account for the 2.1 W power dissipation rating under expected load conditions. Cross-reference the datasheet for moisture sensitivity levels and reflow soldering profiles.
Selection Notes
Select this component when a robust P-channel solution is required for voltages up to 40 V. The low Rds On minimizes conduction losses compared to higher resistance alternatives. Consider the 10.3 A current capability for moderate power loads. The wide temperature range suits industrial environments. Evaluate the gate charge against driver capabilities for optimal switching speed.
Part Context
This part belongs to Diodes Incorporated's discrete semiconductor portfolio, specifically within the MOSFET category. It complements other devices like the N-channel DMN2027UPS-13 and complementary P-channel variants such as the DMP4013SPS-13. These components are designed for compact SMD/SMT implementations in modern electronic systems requiring reliable power control.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided documentation. Verify pinout compatibility and electrical specifications before considering any alternative manufacturers or series.
