DMP2900UFB-7B

$0.20

Description：MOSFET BVDSS: 8V~24V X1-DFN1006-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:9400d6230526 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 8V~24V X1-DFN1006-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：20 V
Current - Continuous Drain (Id) @ 25°C：990mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
Rds On (Max) @ Id, Vgs：750mOhm @ 430mA, 4.5V
Vgs(th) (Max) @ Id：1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：0.7 nC @ 4.5 V
Vgs (Max)：±6V
Input Capacitance (Ciss) (Max) @ Vds：49 pF @ 16 V
FET Feature：-
Power Dissipation (Max)：550mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：X1-DFN1006-3
Package / Case：3-UFDFN

Download product information

DMP2900UFB-7B

Overview

The DMP2900UFB-7B is a P-channel enhancement mode MOSFET in an X1-DFN1006-3 package. It features a -20V drain-source voltage rating and a maximum continuous drain current of -0.99A at +25°C. The device offers low on-state resistance, specified as 0.75Ω max at VGS = -4.5V and 1.05Ω max at VGS = -2.5V. It includes an ESD protected gate and operates within a junction temperature range of -55°C to +150°C.

Feature Summary

Minimized on-state resistance combined with superior switching performance for high-efficiency power management.
Significantly reduced footprint compared to traditional SOT23 packages.
Low gate threshold voltage enabling efficient drive requirements.
Integrated electrostatic discharge protection on the gate terminal.

Applications

Load Switching
High-efficiency Power Management

Procurement Notes

Verify the specific ordering suffix '-7B' corresponds to the tape and reel packing quantity of 10,000 units as documented. Confirm that the X1-DFN1006-3 package dimensions and pad layout requirements align with your PCB design constraints. Ensure compliance with RoHS and halogen-free specifications if required by your manufacturing standards.

Selection Notes

Select this component when space-constrained designs require a P-channel MOSFET with low on-resistance. The -20V rating suits low-voltage applications. Consider the thermal resistance values provided for both minimum pad layouts and larger copper plates when determining heat dissipation capabilities for your specific circuit environment.

Part Context

This part belongs to Diodes Incorporated's advanced information series of P-channel MOSFETs. It utilizes the X1-DFN1006-3 package, which provides a compact solution for modern electronics. The product is designed to balance low static losses with fast dynamic switching characteristics.