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Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V SOT523 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：700mOhm @ 430mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.7 nC @ 4.5 V
- Vgs (Max)：±6V
- Input Capacitance (Ciss) (Max) @ Vds：49 pF @ 16 V
- FET Feature：-
- Power Dissipation (Max)：250mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-523
- Package / Case：SOT-523
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Overview
The DMP2900UT-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated in an SOT523 package. It features a drain-source voltage (V_DSS) of -20 V and a continuous drain current (I_D) of -0.5 A at +25°C. The device exhibits low on-resistance, with R_DS(on) values of 700 mΩ at V_GS = -4.5 V, 900 mΩ at V_GS = -2.5 V, and 1300 mΩ at V_GS = -1.8 V. Key electrical parameters include a gate threshold voltage (V_GS(th)) ranging from -0.5 V to -1.0 V, total gate charge (Q_g) of 0.7 nC, and input capacitance (C_iss) of 49 pF. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Low on-state resistance for high-efficiency power management
- Low gate threshold voltage enabling compatibility with low-voltage logic
- Fast switching speed supported by low input capacitance and gate charge
- ESD protected gate structure
Applications
- DC-DC converters
- Load switches
- Power management functions
Procurement Notes
Verify the specific ordering suffix (-7 or -13) against the required tape and reel quantity before procurement. Confirm that the component meets RoHS 3 and halogen-free requirements if mandated by your design specifications. Ensure the selected part number matches the exact voltage and current ratings needed for your circuit application.
Selection Notes
Select this component when a compact P-channel MOSFET is required for low-voltage applications. Consider the thermal resistance and power dissipation limits relative to your PCB copper area. Evaluate the gate drive voltage levels to ensure they fall within the specified thresholds for optimal on-resistance performance.
Part Context
This component belongs to the DMP series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes a silicon technology process and is housed in a lead-free SOT523 case. The device is designed to minimize on-state resistance while maintaining superior switching performance for modern electronic systems.
Replacement Considerations
Consult official Diodes documentation for verified substitutes. Cross-reference pinouts and electrical characteristics carefully when considering alternative manufacturers.
FAQ
What is the maximum continuous drain current rating?
The maximum continuous drain current is -0.5 A at an ambient temperature of +25°C.
Does the device have an internal body diode?
Yes, the datasheet specifies a Maximum Continuous Body Diode Forward Current of -0.39 A and provides reverse recovery time and charge characteristics.
