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Product Detailed Parameters
- Description：MOSFET BVDSS: 8V~24V SOT523 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：20 V
- Current - Continuous Drain (Id) @ 25°C：500mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：1.8V, 4.5V
- Rds On (Max) @ Id, Vgs：700mOhm @ 430mA, 4.5V
- Vgs(th) (Max) @ Id：1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：0.7 nC @ 4.5 V
- Vgs (Max)：±6V
- Input Capacitance (Ciss) (Max) @ Vds：49 pF @ 16 V
- FET Feature：-
- Power Dissipation (Max)：250mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-523
- Package / Case：SOT-523
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Overview
The DMP2900UTQ-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated, housed in an SOT523 package. It features a drain-source voltage (BVDSS) of -20V and a continuous drain current (ID) of -0.5A at +25°C. The device exhibits low on-resistance (RDS(ON)) values of 700mΩ at VGS = -4.5V, 900mΩ at VGS = -2.5V, and 1300mΩ at VGS = -1.8V. It includes ESD protection for the gate terminal and operates within a temperature range of -55°C to +150°C.
Feature Summary
- Low on-resistance optimized for high-efficiency power management
- Low gate threshold voltage enabling effective switching performance
- ESD protected gate structure with low input/output leakage
- Totally lead-free and fully RoHS compliant construction
Applications
- DC-DC converters
- Load switches
- Power-management functions
Procurement Notes
Verify that the ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration specified in the manufacturer's documentation. Confirm compliance with automotive change control requirements if AEC-Q101 qualification is necessary for the specific application environment.
Selection Notes
Select this component when a compact SOT523 footprint is required for P-channel switching applications. Ensure the design accommodates the maximum junction-to-ambient thermal resistance of 496 °C/W under steady-state conditions without a heatsink. Verify that the gate drive voltage meets the minimum thresholds for the desired on-resistance levels.
Part Context
This part belongs to the DMP2900 series of P-channel MOSFETs from Diodes Incorporated. It is designed as a next-generation solution to minimize on-state resistance while maintaining superior switching characteristics. The product line targets high-efficiency power management systems requiring small form factors.
Replacement Considerations
The datasheet does not list specific substitute part numbers. Evaluate alternatives based on matching BVDSS, ID, RDS(ON), and SOT523 package dimensions. Verify that any replacement maintains equivalent thermal resistance and electrical characteristics for the intended load switch or DC-DC converter application.
