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The DMP2900UVQ is a dual P-channel enhancement mode MOSFET in an SOT563 package. It features a -20V drain-source voltage rating and low on-resistance of 0.75Ω at VGS = -4.5V. Continuous drain current reaches -0.85A at +25°C. The device includes ESD-protected gates, operates from -55°C to +150°C, and is AEC-Q101 qualified for automotive use.
Verify the specific ordering suffix (-7 or -13) against the required tape and reel quantity before procurement. Confirm that the SOT563 package dimensions align with the target PCB footprint. Ensure the design accounts for the thermal resistance values provided in the datasheet under the intended mounting conditions.
Select this component when a compact dual P-channel solution is required for low-voltage applications. The SOT563 package offers a small footprint suitable for space-constrained designs. Verify that the -20V breakdown voltage meets the system requirements and that the continuous current ratings are sufficient for the load.
This part belongs to Diodes Incorporated's advanced generation MOSFET portfolio designed to minimize on-state resistance while maintaining superior switching performance. It is manufactured in IATF 16949 certified facilities and is halogen-free, antimony-free, and fully RoHS compliant.
Consult official cross-reference lists for verified substitutes. Generic replacements may differ in pinout, thermal characteristics, or automotive qualification status.
Yes, the part is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.
The junction and storage temperature range is -55°C to +150°C.
Yes, the gates are protected by internal ESD protection diodes.