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Product Detailed Parameters
- Description：MOSFET P-CH 30V 14A 8SO T&R 2
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：14A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：7mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id：2.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：64.2 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：2826 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.4W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMP3007LSS-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of -30 V and an SO-8 surface-mount package. The device exhibits low on-resistance, specified as a maximum of 7 mΩ at V_GS = -10 V and 10 mΩ at V_GS = -4.5 V. Continuous drain current ratings are -17 A at +25°C for short pulses and -14 A in steady-state conditions. Key electrical parameters include a total gate charge of 64.2 nC at V_GS = -10 V, input capacitance of 2826 pF, and a junction temperature range from -55°C to +150°C.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
- Features an ESD protected gate structure to enhance reliability during handling and operation.
- Compliant with RoHS directives and fully lead-free, halogen-free, and antimony-free manufacturing standards.
Applications
- Backlighting circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 2,500-unit tape and reel packaging configuration. Confirm that the component meets the required UL flammability classification rating of 94V-0 and moisture sensitivity level 3 per J-STD-020 standards for your assembly process. Ensure compatibility with matte tin annealed over copper leadframe terminal finishes.
Selection Notes
Select this component when a low R_DS(ON) value is critical for minimizing conduction losses in P-channel switching applications. Evaluate the thermal resistance characteristics against your board layout requirements, specifically noting the difference between single-sided FR-4 and multi-layer substrate performance. Consider the gate threshold voltage variations across the operating temperature range to ensure reliable turn-on under varying load conditions.
Part Context
This part belongs to the DMP series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes an SO-8 case constructed from molded plastic green molding compound. The internal schematic indicates a built-in gate protection diode. The marking code 'P3007LS' identifies the product type, followed by date code markings for traceability.
Replacement Considerations
No public confirmed substitute part numbers are documented in the provided source material.
FAQ
What is the maximum continuous drain current for the DMP3007LSS-13?
The maximum continuous drain current is -14 A at a steady state ambient temperature of +25°C, and -11.5 A at +70°C. For short duration pulses (t<10s), it can handle up to -17 A at +25°C.
How does the on-resistance vary with gate-source voltage?
The static drain-source on-resistance is maximized at 7 mΩ when V_GS is -10 V. At a lower gate drive of -4.5 V, the maximum R_DS(ON) increases to 10 mΩ.
