DMP3007SCG-13

$1.03

Description：MOSFET P-CH 30V 50A 8DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:ad4ab8e9ffa5 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 50A 8DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6.8mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：64.2 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：2826 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.4W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：V-DFN3333-8 (Type B)
Package / Case：8-PowerVDFN

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DMP3007SCG-13

Overview

The DMP3007SCG-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of -30V and a continuous drain current (ID) of -50A at TC = +25°C. The device offers a typical static drain-source on-resistance (RDS(ON)) of 6.8mΩ at VGS = -10V and 13mΩ at VGS = -4.5V. It utilizes a V-DFN3333-8 (Type B) surface-mount package with an exposed drain pad for thermal efficiency.

Feature Summary

Minimizes on-state resistance while maintaining superior switching performance for high-efficiency power management.
Small form factor thermally efficient package enables higher density end products, occupying just 33% of the board area compared to SO-8.
Provides HBM ESD protection level of 8kV typical.
Totally lead-free, fully RoHS compliant, and halogen and antimony free.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm that the component meets all applicable environmental compliance standards required for your specific manufacturing process and regional regulations before finalizing procurement.

Selection Notes

Select this component when a compact P-channel MOSFET with low on-resistance is required for space-constrained designs. Ensure the application operates within the specified -30V drain-source voltage limit and accounts for the thermal characteristics provided for the V-DFN3333-8 package under your expected load conditions.

Part Context

This part belongs to the DMP series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed specifically to minimize on-state losses while maintaining excellent switching capabilities, making it suitable for applications demanding high efficiency in a small footprint.

Replacement Considerations

Consult official substitution lists or equivalent product guides from Diodes Incorporated for verified alternatives. Cross-reference pinouts, electrical ratings, and package dimensions carefully to ensure compatibility without modifying the existing circuit design.