DMP3007SCG-7

$1.03

Description：MOSFET P-CH 30V 50A 8DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:aeca7af14588 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 50A 8DFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：6.8mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：64.2 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：2826 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2.4W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：V-DFN3333-8 (Type B)
Package / Case：8-PowerVDFN

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DMP3007SCG-7

Overview

The DMP3007SCG-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source voltage rating and a maximum continuous drain current of -50A at TC = +25°C. The device offers a low on-state resistance of 6.8mΩ max at VGS = -10V and 13mΩ max at VGS = -4.5V. Packaged in a V-DFN3333-8 (Type B) surface-mount case, it provides high thermal efficiency with a junction-to-case thermal resistance of 4.0°C/W. Operating temperatures range from -55°C to +150°C.

Feature Summary

Minimizes on-state losses through low RDS(ON) while maintaining superior switching performance.
Small form factor thermally efficient package enables higher density end products.
Occupies just 33% of the board area occupied by SO-8 packages.
Totally lead-free and fully RoHS compliant.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 2,000-unit tape and reel packaging configuration as documented in the manufacturer's ordering information. Confirm that the component meets the required environmental standards for halogen and antimony-free applications if specified by the design constraints.

Selection Notes

Select this component for designs requiring a compact P-channel MOSFET with low conduction losses. Ensure the gate drive voltage supports the specified RDS(ON) thresholds at -4.5V or -10V. Verify that the PCB layout accommodates the exposed drain pad for optimal thermal dissipation within the V-DFN3333-8 footprint.

Part Context

This part belongs to the DMP series of power MOSFETs designed for high-efficiency power management. It utilizes silicon technology and is housed in a molded plastic case with a UL flammability classification rating of 94V-0. The device is intended for surface mount applications where space savings and thermal performance are critical.