DMP3008SFG-13

$0.20

Description：MOSFET P-CH 30V 8.6A PWRDI3333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:8970c7bb4a07 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 8.6A PWRDI3333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：8.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：17mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：47 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2230 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：900mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMP3008SFG-13

Overview

The DMP3008SFG-13 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 surface-mount package. It features a drain-source voltage (V_DSS) of -30 V and a maximum continuous drain current (I_D) of -8.6 A at +25°C with V_GS = -10 V. The device offers a typical on-resistance (R_DS(ON)) of 17 mΩ at V_GS = -10 V and 25 mΩ at V_GS = -4.5 V. Total gate charge is typically 47 nC at V_GS = -10 V. Operating temperature ranges from -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Small form factor thermally efficient package enables higher density end products and occupies just 33% of the board area compared to SO-8 packages.
Qualified to AEC-Q101 standards for high reliability.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm that the specific ordering suffix matches the required packaging quantity and reel specifications. Ensure compliance with RoHS and halogen-free requirements as defined by the manufacturer's green product standards before procurement.

Selection Notes

Select this component for designs requiring a compact P-channel MOSFET with low on-resistance. Consider the thermal characteristics and package size when designing for high-density PCB layouts. Verify gate drive voltage compatibility with the specified R_DS(ON) thresholds.

Part Context

This part belongs to the DMP series of P-channel MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI3333-8 case style, which is a molded plastic package designed for surface mount applications. The device is constructed using silicon technology.