DMP3008SFGQ-13

$0.75

Description：MOSFET P-CH 30V 8.6A PWRDI3333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:247d22509796 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 8.6A PWRDI3333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：8.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：17mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：47 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：2230 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：900mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMP3008SFGQ-13

Overview

The DMP3008SFGQ-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source voltage rating and operates within a junction temperature range of -55°C to +150°C. The device utilizes the PowerDI3333-8 surface-mount package. Key electrical parameters include a maximum on-resistance of 25mΩ at VGS = -4.5V and 17mΩ at VGS = -10V, with a continuous drain current of -8.6A at TA = +25°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Utilizes a small form factor thermally efficient package that occupies just 33% of the board area compared to SO-8 packages.
Qualified to AEC-Q101 standards for high reliability and capable of PPAP requirements.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 3,000-unit tape and reel packaging configuration as defined in the manufacturer's documentation. Confirm compliance with RoHS directives and halogen-free status requirements for your assembly process. Ensure the component matches the PowerDI3333-8 mechanical outline dimensions for PCB footprint compatibility.

Selection Notes

Select this component when a compact P-channel MOSFET with low on-resistance is required for space-constrained designs. The PowerDI3333-8 package offers significant board area reduction compared to traditional SO-8 footprints. Consider the thermal characteristics and AEC-Q101 qualification if automotive or high-reliability environments are involved.

Part Context

This part belongs to the DMP3008 series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It shares the same electrical specifications as the DMP3008SFGQ-7 variant but differs in the standard manufacturing packaging quantity. Both variants utilize the identical PowerDI3333-8 case style and internal die structure.