ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET P-CH 30V 14.5A PWRDI5060
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：14.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：7.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：126.2 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：6234 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2.18W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI5060-8
- Package / Case：8-PowerTDFN
Download product information
Overview
The DMP3010LPS-13 is a P-Channel Enhancement Mode MOSFET manufactured by Diodes Incorporated, housed in a PowerDI5060-8 surface-mount package. It features a drain-source voltage (V_DSS) of -30 V and a gate-source voltage (V_GSS) rating of ±20 V. The device supports a continuous drain current (I_D) of -36 A at V_GS = -10 V and -31 A at V_GS = -4.5 V. Static drain-source on-resistance (R_DS(ON)) is specified as 7.5 mΩ max at V_GS = -10 V and 10 mΩ max at V_GS = -4.5 V. Total gate charge (Q_g) is 126.2 nC at V_GS = -10 V. Operating temperature range spans from -55 °C to +150 °C.
Feature Summary
- Thermally efficient PowerDI5060-8 package with less than 1.1 mm profile for thin applications
- Low R_DS(ON) minimizes on-state losses while maintaining superior switching performance
- ESD HBM protected up to 1 kV
- Qualified to AEC-Q101 standards for high reliability
Applications
- Notebook battery power management
- DC-DC converters
- Loadswitch
Procurement Notes
Verify the component revision and datasheet version prior to procurement, as the document explicitly states this part is not recommended for new designs. Confirm that the specific ordering suffix matches the required packaging configuration. Ensure compliance with RoHS and halogen-free requirements if applicable to the target assembly process. Cross-reference the manufacturer's official documentation for any updates regarding availability or alternative recommendations.
Selection Notes
Select this component for low-voltage DC-DC conversion and load switch applications requiring high current handling in a compact form factor. Evaluate thermal resistance characteristics against the specific PCB copper area and heatsinking strategy. Consider the gate threshold voltage and total gate charge when designing drive circuits to ensure optimal switching speed and efficiency. Verify that the -30 V rating aligns with the system's maximum operating voltage under all transient conditions.
Part Context
This device belongs to the DMP3010 series of P-Channel Enhancement Mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is packaged in the PowerDI5060-8 case style. The product line emphasizes minimizing on-resistance while preserving fast switching capabilities for portable electronics and power management systems.
Replacement Considerations
The datasheet explicitly recommends using DMP3007SPS as an alternative. Verify pinout compatibility and electrical specifications before substitution.
