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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V U-DFN2523-
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：10.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：12mOhm @ 9.5A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：46 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：2380 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.04W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2523-6
- Package / Case：6-PowerUDFN
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Overview
The DMP3011SFK-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source voltage rating and a maximum continuous drain current of -10.7A at +25°C. The device offers a low on-resistance of 12mΩ at VGS = -10V and 25mΩ at VGS = -4.5V. Packaged in a U-DFN2523-6 surface-mount format, it supports an operating temperature range from -55°C to +150°C with a total power dissipation of 1.04W.
Feature Summary
- Low on-state resistance for high-efficiency power management
- ESD protected gate structure
- Totally lead-free and fully RoHS compliant construction
Applications
- Load switches
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets all applicable environmental directives, including RoHS 2, RoHS 3, and halogen/antimony-free requirements as defined by the manufacturer's quality standards.
Selection Notes
Select this component when a compact P-channel solution is required for low-voltage applications. The U-DFN2523-6 package provides a small footprint suitable for space-constrained designs. Ensure the gate drive voltage aligns with the specified thresholds for optimal on-resistance performance.
Part Context
This part belongs to the DMP3011 series of P-channel MOSFETs designed to minimize on-state resistance while maintaining superior switching performance. The family targets high-efficiency power management applications requiring robust thermal characteristics and reliable operation across wide temperature ranges.
Replacement Considerations
Consult official documentation for verified substitutes. Cross-referencing requires matching voltage ratings, current capabilities, and package dimensions.
