DMP3011SFVW-7

$0.81

Description：MOSFET BVDSS: 25V~30V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:3a9502680fe2 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：19.8A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：10mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：46 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：2380 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：980mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMP3011SFVW-7

Overview

The DMP3011SFVW-7 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 (SWP) package. It features a drain-source voltage of -30V and a maximum continuous drain current of -50A at TC = +25°C. The device exhibits a low on-state resistance of 10mΩ at VGS = -10V and 18mΩ at VGS = -4.5V. Operating temperatures range from -55°C to +150°C.

Feature Summary

Low RDS(on) minimizes on-state losses for high-efficiency power management.
Small form factor thermally efficient package enables higher density end products.
Occupies just 33% of the board area occupied by SO-8 packages.
ESD protected gate with totally lead-free and fully RoHS compliant construction.

Applications

General purpose interfacing switch
Power management functions

Procurement Notes

Verify the specific ordering suffix (-7 or -13) against your manufacturing requirements, as they denote different tape and reel quantities. Confirm that the PowerDI3333-8 footprint matches your PCB layout guidelines. Ensure thermal design accounts for the specified junction-to-ambient resistance values under your expected operating conditions.

Selection Notes

Select this component when space constraints are critical due to its compact PowerDI3333-8 footprint. Consider the -30V rating and high current capabilities for low-voltage DC-DC converters or load switches. Evaluate the thermal performance based on your system's ambient temperature and copper pad layout to ensure reliable operation within the specified junction temperature limits.

Part Context

This part belongs to Diodes Incorporated's new generation of MOSFETs designed to balance low on-state resistance with superior switching performance. It utilizes a molded plastic case with matte tin annealed terminals over a copper leadframe. The device is classified as a 'Green' product, being halogen and antimony free.