DMP3011SFVWQ-13

$1.03

Description：MOSFET P-CH 30V 11.5A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:00e527bfc908 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 11.5A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：19.8A (Ta), 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：10mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：46 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：2380 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：980mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI3333-8 (SWP) Type UX
Package / Case：8-PowerVDFN

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DMP3011SFVWQ-13

Overview

The DMP3011SFVWQ is a 30V P-channel enhancement mode MOSFET in a PowerDI3333-8 package. It features a maximum drain-source voltage of -30V and gate-source voltage of ±25V. On-resistance is 10mΩ max at VGS=-10V and 18mΩ max at VGS=-4.5V. Continuous drain current reaches -50A at TC=+25°C. The device supports an operating junction temperature range of -55°C to +150°C, with thermal resistance RθJC of 3.3°C/W.

Feature Summary

Designed for automotive applications with AEC-Q101 qualification and PPAP capability.
Small form factor thermally efficient package enables higher density end products.
Occupies just 33% of the board area occupied by SO-8 packages.
Gate protected against electrostatic discharge.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' indicates a 3,000-unit tape and reel packaging configuration. Confirm that the component meets IATF 16949 manufacturing standards required for your specific automotive change control protocols. Ensure compatibility with RoHS 3 and halogen-free requirements before finalizing procurement specifications.

Selection Notes

Select this component when space constraints require a footprint significantly smaller than standard SO-8 packages while maintaining high current handling capabilities. The low on-resistance characteristics make it suitable for applications prioritizing efficiency in power management circuits. Verify that the -30V rating aligns with your system's maximum voltage requirements.

Part Context

This part belongs to Diodes Incorporated's portfolio of automotive-grade power switches. It utilizes the PowerDI3333-8 case style, which provides enhanced thermal performance compared to traditional plastic packages. The device is manufactured in certified facilities to support stringent automotive quality standards.

Replacement Considerations

Check datasheet DS43268 for equivalent circuit diagrams and pinout configurations when evaluating substitutes. Ensure any replacement maintains the same P-channel enhancement mode operation and compatible package dimensions for direct board integration.