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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V SO-8 T&R 2
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：11A (Ta), 32A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：10mOhm @ 11.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：46 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：2380 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.4W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMP3011SSS-13 is a single-channel P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of -30V and a gate-source voltage (VGSS) rating of ±25V. The device offers a maximum static drain-source on-resistance (RDS(ON)) of 10mΩ at VGS = -10V and 18mΩ at VGS = -4.5V. Continuous drain current (ID) is rated at -11A at TA = +25°C and -8.8A at TA = +70°C. Total power dissipation (PD) is 1.4W at TA = +25°C with a thermal resistance (RθJA) of 90°C/W. Operating temperature range spans from -55°C to +150°C.
Feature Summary
- Low RDS(ON) minimizes on-state losses for high efficiency
- Small form factor thermally efficient package enables higher density end products
- Occupies just 33% of the board area occupied by SO-8 enabling smaller end product
- ESD protected gate
Applications
- Backlighting
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packing quantity of 2,500 units as documented in the manufacturer's ordering information. Confirm that the component meets RoHS compliance standards and is halogen and antimony free. Ensure the procurement channel provides valid traceability for JEDEC qualified parts intended for high reliability applications.
Selection Notes
Select this component when designing circuits requiring a compact P-channel MOSFET with low on-resistance and fast switching performance. The small form factor allows for significant board space reduction compared to standard SO-8 packages. Verify that the required continuous drain current and power dissipation capabilities align with the thermal constraints of the target application environment.
Part Context
This part belongs to the DMP3011 series of P-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes an SO-8 surface mount package designed for high-density PCB layouts. The device is engineered to balance low conduction losses with superior switching characteristics, targeting modern power management solutions where size and efficiency are critical design parameters.
Replacement Considerations
For automotive applications requiring specific change control, refer to the related automotive grade (Q-suffix) part listed on the manufacturer's website. Standard industrial replacements must match the -30V BVDSS, SO-8 package, and equivalent RDS(ON) specifications.
FAQ
What is the board area advantage of the DMP3011SSS package?
The package occupies just 33% of the board area occupied by a standard SO-8 package.
Is the DMP3011SSS suitable for automotive applications?
Standard versions are not automatically automotive qualified. For automotive applications requiring specific change control, refer to the related automotive grade (Q-suffix) part.
