DMP3012LPS-13

$1.14

Description：MOSFET P-CH 30V 13.2A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:32a9b855a6c1 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 13.2A PWRDI5060
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：13.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：9mOhm @ 10A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：139 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：6807 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.29W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMP3012LPS-13

Overview

The DMP3012LPS-13 is a P-Channel Enhancement Mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source breakdown voltage and a maximum gate-source voltage of ±20V. The device operates in the -55°C to +150°C temperature range with a continuous drain current of 13.2A at TA=+25°C. Key electrical parameters include a typical RDS(ON) of 9mΩ at VGS=-10V, an input capacitance of 6807pF, and a total gate charge of 139nC. It utilizes the POWERDI5060-8 package.

Feature Summary

Thermally efficient POWERDI5060-8 package designed for cooler running applications
Low on-state resistance minimizes power losses during conduction
Fast switching speed supported by low input capacitance
ESD HBM protection rated up to 1kV

Applications

Notebook battery power management
DC-DC converters
Loadswitch circuits

Procurement Notes

Verify the component against official datasheet DS35247 Rev. 2-2 specifications. Confirm the part number suffix matches the required tape and reel packaging format. Ensure compatibility with RoHS and AEC-Q101 standards if automotive reliability is required. Cross-reference pin configurations and thermal characteristics before integration.

Selection Notes

Select this component for designs requiring a compact P-Channel MOSFET with high conversion efficiency. The low profile package suits thin application constraints. Evaluate thermal resistance values based on specific PCB copper area and ambient temperature conditions to ensure safe operating limits are maintained under load.

Part Context

This device belongs to the DMP3012 series from Diodes Incorporated. It is housed in the POWERDI5060-8 case, which provides a balance between thermal performance and small footprint. The product is fully lead-free, halogen-free, and antimony-free, adhering to green device manufacturing standards.

Replacement Considerations

Check for direct substitutes within the same manufacturer's portfolio that share identical pinouts and electrical ratings. Verify package dimensions and thermal characteristics match the existing design constraints before swapping components.