DMP3012SPSW-13

$0.32

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:e8cc43e27849 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：14A (Ta), 71A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：10mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：109 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：5929 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.7W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount, Wettable Flank
Supplier Device Package：PowerDI5060-8 (Type UX)
Package / Case：8-PowerTDFN

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DMP3012SPSW-13

Overview

The DMP3012SPSW-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of -30V and a low on-state resistance (RDS(ON)) of 7mΩ at VGS = -10V, or 13mΩ at VGS = -4.5V. The device supports a continuous drain current (ID) of up to -86A at TC = +25°C. Packaged in a PowerDI5060-8/SWP format with a profile under 1.1mm, it offers fast switching speeds and low input capacitance for high-efficiency power management.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance
Features a package profile of less than 1.1mm, suitable for thin applications
Totally lead-free and fully RoHS compliant
Halogen and antimony free green device

Applications

DC-DC converters
Power-management functions
Analog switches

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2,500 units per reel. Confirm that the component meets the required environmental standards, specifically RoHS 2/3 compliance and Halogen/Antimony-free definitions. Ensure the selected part matches the PowerDI5060-8/SWP mechanical dimensions and pad layout requirements for your PCB design.

Selection Notes

Select this component when a low-profile P-channel MOSFET is required for space-constrained designs. The device provides high current handling capabilities with minimal conduction losses due to its low RDS(ON). Consider the thermal resistance characteristics and operating temperature range (-55°C to +150°C) to ensure suitability for the intended application environment and heat dissipation constraints.

Part Context

This component belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated. It utilizes the PowerDI®5060-8/SWP package type, which is designed for surface mount technology. The product line emphasizes efficiency and compact form factors for modern electronic systems requiring reliable power switching solutions.