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Product Detailed Parameters
- Description：MOSFET P-CH 30V 13A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：13A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：11mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id：2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：60.4 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：2748 pF @ 20 V
- FET Feature：-
- Power Dissipation (Max)：2.5W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMP3015LSSQ-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a drain-source voltage (V_DSS) of -30 V and a maximum continuous drain current (I_D) of -13 A at +25°C. The device offers a low on-state resistance (R_DS(ON)) of 11 mΩ at V_GS = -10 V and 17 mΩ at V_GS = -4.5 V. Total gate charge (Q_g) is specified as 60.4 nC at V_GS = -10 V. The component operates within a temperature range of -55°C to +150°C and is housed in an SO-8 package with a total power dissipation rating of 2.5 W.
Feature Summary
- Designed for high-efficiency power management applications through minimized on-state resistance while maintaining superior switching performance.
- Suitable for automotive applications requiring specific change control, featuring AEC-Q101 qualification and PPAP capability.
- Manufactured in IATF16949 certified facilities with totally lead-free, fully RoHS compliant, and halogen/antimony free construction.
Applications
- Backlighting
- Power management functions
- DC-DC converters
Procurement Notes
Verify the part number suffix matches the required packaging configuration. Confirm that the component meets specific automotive quality standards if intended for such environments. Ensure design compliance with the manufacturer's standard terms and conditions regarding liability and warranty limitations before procurement.
Selection Notes
Select this component for designs requiring a single P-channel MOSFET with a -30 V breakdown voltage. Consider the thermal resistance of 50 °C/W when calculating heat dissipation for the SO-8 package. Evaluate the gate threshold voltage requirements against the driving circuit capabilities to ensure reliable turn-on characteristics under varying load conditions.
Part Context
This component belongs to the DMP3015 series of P-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology and is packaged in an SO-8 format. The internal schematic indicates a single transistor configuration with drain, source, and gate terminals accessible via the eight-pin outline.
Replacement Considerations
The datasheet explicitly states that this part is not recommended for new designs and recommends using the DMP3007SPSQ as the replacement.
FAQ
Is the DMP3015LSSQ suitable for new designs?
No, the datasheet explicitly marks this component as 'NOT RECOMMENDED FOR NEW DESIGN' and suggests using the DMP3007SPSQ instead.
What is the maximum pulsed drain current for this MOSFET?
The maximum pulsed drain current (I_DM) is specified as -45 A, provided the pulse width is less than or equal to 10μs and the duty cycle is less than or equal to 1%.
