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Product Detailed Parameters
- Description：MOSFET P-CH 30V 11.5A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：11.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：10mOhm @ 11.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：41 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：2246 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：940mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
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Overview
The DMP3017SFG-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated, housed in a PowerDI3333-8 surface-mount package. It features a drain-source voltage (V_DSS) of -30 V and a gate-source voltage (V_GSS) rating of ±25 V. The device provides a maximum on-resistance (R_DS(ON)) of 10 mΩ at V_GS = -10 V and 18 mΩ at V_GS = -4.5 V. Continuous drain current (I_D) reaches -11.5 A at +25°C ambient temperature. Total gate charge (Q_g) is specified as 41 nC at V_GS = -10 V. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
- Small form factor thermally efficient package enables higher density end products and occupies just 33% of the board area compared to SO-8 packages.
- Features an ESD protected gate structure for enhanced reliability.
Applications
- Backlighting
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify that the specific ordering suffix matches the required packaging quantity, as the datasheet lists both 2,000-unit and 3,000-unit tape and reel options. Confirm compliance with RoHS and halogen-free requirements if environmental specifications are mandatory for the target assembly process. Ensure the design accounts for the 'Not Recommended for New Design' status indicated in the documentation.
Selection Notes
Select this component when a compact P-channel switch is required for 30V systems with moderate current demands up to 11.5A. Evaluate thermal dissipation capabilities based on the specific PCB copper area and ambient conditions, as power ratings vary significantly between steady-state and transient operations. Consider the lower R_DS(ON) at -10V gate drive for optimal efficiency.
Part Context
This part belongs to the DMP3017 series of P-channel MOSFETs from Diodes Incorporated. It utilizes the PowerDI3333-8 case style, which is a molded plastic package with matte tin annealed terminals over a copper leadframe. The device is qualified to AEC-Q101 standards for high reliability, indicating suitability for automotive-grade applications where such certification is required.
Replacement Considerations
The datasheet explicitly states 'NOT RECOMMENDED FOR NEW DESIGN' and advises using the DMP3013SFV instead. Engineers should evaluate the DMP3013SFV as the primary replacement or alternative for new designs due to this manufacturer recommendation.
