DMP3017SFGQ-7

$0.74

Description：MOSFET P-CH 30V 11.5A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:2f71d53fbcce Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 11.5A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：11.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：10mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：41 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：2246 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：940mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMP3017SFGQ-7

Overview

The DMP3017SFGQ-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source breakdown voltage and an on-state resistance of 10mΩ at VGS = -10V, supporting a continuous drain current of -11.5A. The device utilizes the PowerDI3333-8 surface-mount package, which occupies only 33% of the board area compared to SO-8 packages. It operates within a junction temperature range of -55°C to +150°C and is AEC-Q101 qualified for automotive applications.

Feature Summary

Minimizes on-state resistance while maintaining superior switching performance for high-efficiency power management.
Small form factor thermally efficient package enables higher density end products.
Occupies just 33% of the board area occupied by SO-8 enabling smaller end product.
ESD protected gate.

Applications

Backlighting
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix (e.g., -7 or -13) against the required packing quantity, as the datasheet lists 2,000 units for the -7 variant and 3,000 units for the -13 variant. Confirm that the component meets the RoHS and Halogen-free requirements specified in the manufacturer's quality definitions. Ensure the design accommodates the 'Not Recommended for New Design' status by evaluating the recommended replacement part number provided in the documentation.

Selection Notes

Select this component when space constraints are critical, given its compact PowerDI3333-8 footprint. Consider the thermal characteristics, specifically the junction-to-case resistance of 3.0°C/W, for heat dissipation planning. Verify that the gate drive voltage aligns with the low RDS(ON) specifications at -4.5V or -10V. Evaluate the ESD protection features if the application involves sensitive gate inputs.

Part Context

This part belongs to the DMP3017 series of P-channel MOSFETs from Diodes Incorporated. It is designed for applications requiring low on-state resistance and small physical size. The device is suitable for automotive applications due to its AEC-Q101 qualification and PPAP capability. It is manufactured in IATF 16949 certified facilities.

Replacement Considerations

The datasheet explicitly states that this part is not recommended for new designs and recommends using DMP3011SFVWQ as the substitute.

FAQ

Is the DMP3017SFGQ-7 suitable for automotive applications?

Yes, the DMP3017SFGQ is suitable for automotive applications requiring specific change control. It is AEC-Q101 qualified, PPAP capable, and manufactured in IATF 16949 certified facilities.