DMP3017SFK-13

Description：MOSFET P-CH 30V 10.4A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:3959a210d3ae Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 10.4A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：10.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：14mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：90 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：4414 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2523-6
Package / Case：6-PowerUDFN

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DMP3017SFK-13

Overview

The DMP3017SFK-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2523-6 package and operates with a drain-source voltage of -30V. The device provides a maximum on-resistance of 14mΩ at VGS=-10V and 25mΩ at VGS=-4.5V. Continuous drain current reaches -10.4A at +25°C. It includes an integrated gate protection diode, supports junction temperatures up to +150°C, and meets AEC-Q101 standards.

Feature Summary

Integrated gate protection diode for enhanced reliability
Qualified to AEC-Q101 automotive standards
Totally lead-free and fully RoHS compliant construction

Applications

Load Switch
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the 10,000-unit tape and reel packaging configuration. Confirm that the component meets all applicable environmental directives, including RoHS 2 and REACH requirements, as specified in the manufacturer's documentation before finalizing procurement specifications.

Selection Notes

Select this component when low on-state resistance and superior switching performance are required for high-efficiency power management applications. Ensure the design accommodates the U-DFN2523-6 package dimensions and thermal characteristics. Verify that the gate drive voltage aligns with the specified thresholds for optimal conduction and switching behavior.

Part Context

This part belongs to the DMP3017 series of P-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology within a U-DFN2523-6 case. The product line emphasizes minimized on-state resistance while maintaining robust switching capabilities suitable for demanding electronic environments.