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The DMP3017SFK-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2523-6 surface-mount package and operates with a drain-source voltage of -30V. The device provides a maximum on-resistance of 14mΩ at VGS=-10V and 25mΩ at VGS=-4.5V, supporting continuous drain currents of -10.4A and -7.8A respectively at +25°C. Key electrical parameters include a gate threshold voltage range of -1V to -2.5V, total gate charge up to 90nC at -10V, and input capacitance up to 4414pF. Thermal characteristics specify a junction-to-ambient resistance of 123°C/W on FR-4 without thermal vias.
Verify the specific ordering suffix when purchasing. The -7 suffix indicates a tape and reel quantity of 3,000 units, while the -13 suffix corresponds to 10,000 units per reel. Confirm that the required packaging format aligns with the intended manufacturing process before placing orders.
Select this component for applications requiring low conduction losses in compact designs. Ensure the driving circuit can supply sufficient gate voltage to achieve the minimum on-resistance values. Verify thermal management requirements based on the specified junction-to-ambient resistance and expected duty cycles.
This part belongs to the DMP3017 series from Diodes Incorporated. It utilizes a U-DFN2523-6 case design, which is a molded plastic package with nickel-palladium-gold terminals over a copper leadframe. The device is fully RoHS compliant and halogen-free.
The datasheet lists DMP3017SFK-13 as an alternative packaging option within the same product family. No other cross-model substitutes are documented in the provided source material.
The maximum pulsed drain current (IDM) is rated at -80A for a 10µs pulse duration with a 1% duty cycle.
Yes, the DMP3017SFK is qualified to AEC-Q101 standards for high reliability.