DMP3017SFV-13

Description：MOSFET P-CH 30V 40A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:6c0ec4f9a3d4 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 40A POWERDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：40A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：10mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：41 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：2246 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：31W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI3333-8
Package / Case：8-PowerVDFN

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DMP3017SFV-13

Overview

The DMP3017SFV-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source breakdown voltage and an on-resistance of 8.5mΩ at VGS=-10V. The device supports a continuous drain current of -40A at TC=+25°C and operates within a junction temperature range of -55°C to +150°C. Packaged in PowerDI3333-8, it includes gate ESD protection and meets RoHS standards.

Feature Summary

Low on-state resistance minimizes power losses during conduction
PowerDI3333-8 package provides high thermal efficiency and density
Integrated gate protection against electrostatic discharge

Applications

Backlighting circuits
DC-DC converters
Power management functions

Procurement Notes

Verify component authenticity through authorized channels. Confirm the datasheet revision matches DS37534 Rev. 3. Ensure compliance with environmental directives such as RoHS and lead-free requirements before integration into final assemblies.

Selection Notes

Evaluate thermal performance based on specific board copper area and ambient conditions. Compare switching characteristics against system requirements. Consider alternative models like DMP3013SFV for new designs due to manufacturer recommendations.

Part Context

This component belongs to the DMP3017 series of P-channel MOSFETs from Diodes Incorporated. It utilizes silicon technology and is designed for compact power applications requiring efficient switching capabilities within small form factors.