DMP3018SFK-13

$0.26

Description：MOSFET P-CH 30V 10.2A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:65d511163c7c Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 10.2A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：10.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：14.5mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：90 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：4414 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2523-6
Package / Case：6-PowerUDFN

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DMP3018SFK-13

Overview

The DMP3018SFK-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2523-6 surface-mount package and is designed for high-efficiency power management applications. The device provides a drain-source voltage rating of -30V and a continuous drain current of -10.2A at +25°C ambient temperature. It achieves a maximum on-state resistance of 14.5mΩ at VGS = -10V and 25.5mΩ at VGS = -4.5V. Total power dissipation is rated at 1W in free air, with an operating junction temperature range from -55°C to +150°C.

Feature Summary

Low on-resistance design minimizes conduction losses while maintaining superior switching performance.
Low input capacitance and low input/output leakage currents support efficient operation.
Gate structure includes integrated ESD protection.
Qualified to AEC-Q101 standards for automotive-grade high reliability.

Applications

Load Switch
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel packaging quantity of 10,000 units per reel. Confirm that the U-DFN2523-6 case dimensions and pad layout requirements align with the target PCB design. Ensure compliance with RoHS 2 and halogen-free specifications if mandated by the end-product regulations.

Selection Notes

Select this component when a compact P-channel MOSFET with low RDS(ON) is required for space-constrained designs. The U-DFN2523-6 package offers a small footprint suitable for dense layouts. Consider the thermal resistance characteristics and available copper area for heat dissipation when determining the maximum allowable current in the final application environment.

Part Context

This part belongs to the DMP3018 series of P-channel MOSFETs from Diodes Incorporated. It utilizes a plastic 'Green' molding compound with UL flammability classification 94V-0. The terminals are finished with NiPdAu over a copper leadframe, ensuring solderability per MIL-STD-208. The device is moisture sensitivity level 1 compliant.

Replacement Considerations

The datasheet lists DMP3018SFK-7 as an alternative within the same family, differing only in the reel packaging quantity (3,000 units). No other cross-model substitutes are explicitly documented in the provided source material.