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Product Detailed Parameters
- Description：MOSFET P-CH 30V 11A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：11A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：12mOhm @ 11.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：51 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：2147 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI3333-8 (Type UX)
- Package / Case：8-PowerVDFN
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Overview
The DMP3018SFV-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source voltage rating and a maximum continuous drain current of -35A at case temperature of +25°C. The device offers a typical on-resistance of 12mΩ at VGS = -10V and 21mΩ at VGS = -4.5V. Packaged in a PowerDI3333-8 (Type UX) surface-mount format, it supports an operating junction temperature range from -55°C to +150°C.
Feature Summary
- Minimizes on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
- Small form factor thermally efficient package enables higher density end products and occupies just 33% of the board area compared to SO-8 packages.
- Features ESD protected gate and is totally lead-free, fully RoHS compliant, and halogen and antimony free.
Applications
- Backlighting
- Power Management Functions
- DC-DC Converters
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the 3,000 units per tape and reel packaging configuration as defined in the manufacturer's ordering information. Confirm that the component meets all applicable environmental compliance standards including RoHS directives and halogen-free requirements before finalizing procurement specifications.
Selection Notes
Select this component when a compact P-channel MOSFET with low on-resistance is required for space-constrained designs. The PowerDI3333-8 package provides significant board area savings compared to traditional SO-8 footprints. Ensure thermal management strategies account for the specified thermal resistance values under the intended operating conditions.
Part Context
This part belongs to the DMP3018SFV series of P-channel MOSFETs designed for high-efficiency applications. It utilizes the PowerDI3333-8 (Type UX) case style, which is a molded plastic package with matte tin annealed terminals over a copper leadframe. The device is classified as a single channel enhancement mode transistor suitable for surface mount technology assembly.
Replacement Considerations
The datasheet lists DMP3018SFV-7 as an equivalent part number within the same series, differing only in the quantity per tape and reel packaging configuration.
