DMP3018SFV-7

$0.56

Description：MOSFET P-CH 30V 11A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:1063917bdb23 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 11A PWRDI3333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：11A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：12mOhm @ 11.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：51 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：2147 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：PowerDI3333-8 (Type UX)
Package / Case：8-PowerVDFN

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DMP3018SFV-7

Overview

The DMP3018SFV-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated, housed in a PowerDI3333-8 (Type UX) surface-mount package. It features a drain-source voltage rating of -30V and a continuous drain current of -11A at +25°C ambient temperature, extending to -35A at case temperatures of +25°C. The device achieves a maximum on-resistance of 12mΩ at VGS=-10V and 21mΩ at VGS=-4.5V. Key electrical parameters include a gate threshold voltage of up to -3.0V, a total gate charge of 51nC at VGS=-10V, and an input capacitance of 2147pF. Thermal characteristics specify a junction-to-ambient resistance of 133°C/W on FR-4 with minimum pad layout.

Feature Summary

Minimizes on-state resistance while maintaining superior switching performance for high-efficiency power management.
Small form factor thermally efficient package enables higher density end products.
Occupies just 33% of the board area occupied by SO-8 enabling smaller end product.
ESD Protected Gate.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix against official Diodes Incorporated documentation to confirm packaging quantity and reel specifications. Confirm that the component meets RoHS, Halogen-free, and Antimony-free compliance requirements as defined by the manufacturer's quality standards before finalizing procurement contracts.

Selection Notes

Select this component when designing circuits requiring a compact P-channel switch with low on-resistance. Ensure the application operates within the specified -30V drain-source voltage limit and respects the thermal constraints defined by the junction-to-ambient resistance values provided in the datasheet.

Part Context

This part belongs to the DMP3018SFV series of P-channel MOSFETs from Diodes Incorporated. It utilizes the PowerDI3333-8 (Type UX) package, which is designed to reduce board space compared to traditional SO-8 packages while providing adequate thermal dissipation for surface-mount applications.

Replacement Considerations

Consult official Diodes Incorporated documentation for confirmed substitute part numbers. Verify pinout compatibility and electrical parameter equivalence before implementing any alternative components in existing designs.