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Product Detailed Parameters
- Description：MOSFET P-CH 30V 11A PWRDI3333
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：11A (Ta), 35A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：12mOhm @ 11.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：51 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：2147 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PowerDI3333-8 (Type UX)
- Package / Case：8-PowerVDFN
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Overview
The DMP3018SFVQ-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a 30 V drain-source breakdown voltage and an 11 A continuous drain current rating at ambient temperature, with a peak pulsed current of 35 A at case temperature. The device exhibits a maximum on-resistance of 18 mΩ at a gate-source voltage of -10 V. It is housed in a PowerDI 3333-8 surface-mount package, designed for efficient thermal dissipation with a power rating of 1 W at ambient conditions. The component operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Low on-resistance for high efficiency power switching
- Enhanced thermal performance via PowerDI package design
- High current handling capability for compact applications
Applications
- DC-DC converter output stages
- Load switch circuits
- Power management modules
Procurement Notes
Verify the specific suffix 'Q' against the manufacturer's official datasheet to confirm automotive qualification status or specific reliability standards. Ensure the ordering part number matches the exact package variant and tape-and-reel specifications required for your assembly process. Cross-reference the latest revision history to ensure compliance with current RoHS and REACH directives.
Selection Notes
Select this component when a low-profile, high-current P-channel solution is required in a small footprint. The 18 mΩ on-resistance balances conduction losses with switching performance. Consider the 1 W power dissipation limit for thermal management strategies. Verify that the 30 V voltage rating provides sufficient headroom for the target application's supply rails.
Part Context
This part belongs to the DMP series of P-channel MOSFETs from Diodes Incorporated, which focuses on providing robust switching solutions in compact packages. The PowerDI 3333-8 package is commonly used in portable electronics and industrial control systems where space constraints are critical. The series typically offers optimized trade-offs between on-resistance and gate charge for efficient power conversion.
Replacement Considerations
Check for direct substitutes such as the DMP3018SFV-7, ensuring the functional parameters match. Verify if alternative packages like SO-8 offer similar electrical characteristics if pinout compatibility allows. Confirm that any replacement maintains the same voltage and current ratings.
