DMP3021SFVW-13

$0.78

Description：MOSFET BVDSS: 25V~30V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:a7bf724bdca9 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：11A (Ta), 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：15mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：1799 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMP3021SFVW-13

Overview

The DMP3021SFVW-13 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 (SWP) package. It features a drain-source voltage of -30V and a maximum continuous drain current of -42A at case temperature of +25°C. The device exhibits a static drain-source on-resistance of 15mΩ at VGS = -10V and 25mΩ at VGS = -5V. Thermal resistance from junction to case is 3.6°C/W, with an operating temperature range spanning -55°C to +150°C.

Feature Summary

Minimizes on-state resistance while maintaining superior switching performance for high-efficiency power management.
Small form factor thermally efficient package enables higher density end products.
Occupies just 33% of the board area occupied by SO-8 enabling smaller end product.
ESD Protected Gate.

Applications

General purpose interfacing switches
Power management functions

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packing quantity and carrier type. Confirm that the component meets all applicable RoHS and environmental compliance standards required for your manufacturing process. Ensure thermal design accounts for the specified junction-to-case resistance values under your intended load conditions.

Selection Notes

Select this component when space constraints require a footprint significantly smaller than standard SO-8 packages while maintaining high current handling capabilities. Evaluate the gate threshold voltage characteristics to ensure compatibility with your logic level drive requirements. Consider the thermal resistance specifications relative to your PCB copper layout and ambient operating temperatures.

Part Context

This part belongs to the DMP3021 series of P-channel MOSFETs designed for low on-resistance applications. It utilizes the PowerDI3333-8 surface mount technology, which provides enhanced thermal dissipation compared to traditional plastic packages. The series is engineered to support compact designs in modern electronic systems requiring efficient power switching.

Replacement Considerations

An automotive-compliant version is available under the separate datasheet for DMP3021SFVWQ. Verify pinout compatibility and electrical parameter overlaps before substituting with other P-channel MOSFETs in similar packages.