DMP3021SFVW-7

$0.71

Description：MOSFET BVDSS: 25V~30V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:8db2ff0b3fd9 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V POWERDI333
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：11A (Ta), 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：15mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：1799 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMP3021SFVW-7

Overview

The DMP3021SFVW-7 is a single P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source breakdown voltage and a maximum continuous drain current of -42A at case temperature +25°C. The device offers a typical static drain-source on-resistance of 10.3mΩ at VGS=-10V and 15.5mΩ at VGS=-5V. Packaged in the PowerDI3333-8 surface-mount format, it supports an operating junction temperature range from -55°C to +150°C.

Feature Summary

Low on-state resistance minimizes conduction losses for high-efficiency power management
PowerDI3333-8 package provides thermal efficiency and occupies significantly less board area than SO-8
Integrated gate protection diode safeguards against electrostatic discharge events

Applications

General purpose interfacing switches
Power management functions

Procurement Notes

Verify the specific ordering suffix to confirm packing quantity and carrier type. Confirm that the component meets RoHS compliance and halogen-free requirements if mandated by project specifications. Ensure the selected variant matches the required tape and reel configuration for automated assembly processes.

Selection Notes

Select this component when low on-resistance and compact footprint are critical design constraints. Evaluate thermal performance based on the specific PCB copper area and mounting conditions. Consider the integrated ESD protection feature for applications requiring enhanced gate robustness without external components.

Part Context

This part belongs to the DMP3021 series of P-channel MOSFETs designed for modern power management needs. It utilizes silicon technology within a molded plastic green compound package. The product line emphasizes reduced board space consumption while maintaining superior switching performance characteristics.