DMP3021SFVWQ-7

$0.82

Description：MOSFET P-CH 30V 9.8A PWRDI3333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4076e3906afc Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 9.8A PWRDI3333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：11A (Ta), 42A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：15mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：34 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：1799 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI3333-8
Package / Case：8-PowerVDFN

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DMP3021SFVWQ-7

Overview

The DMP3021SFVWQ is a 30V P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of -30V and a gate-source voltage (VGSS) rating of ±25V. The device offers a static drain-source on-resistance (RDS(ON)) of 15mΩ at VGS = -10V and 25mΩ at VGS = -5V. Continuous drain current (ID) reaches -42A at TC = +25°C and -9A at TA = +70°C. Pulsed drain current (IDM) is rated at -128A. Total power dissipation (PD) is 1W at TA = +25°C with a thermal resistance (RθJA) of 126.6°C/W. Operating temperature range spans from -55°C to +150°C.

Feature Summary

Designed for automotive applications with AEC-Q101 qualification and PPAP capability.
Utilizes PowerDI3333-8 package to occupy 33% less board area compared to SO-8 packages.
Features ESD protected gate structure for enhanced reliability.

Applications

Backlighting
Power-management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix matches the required packing quantity, as the -7 suffix indicates a 2,000-unit tape and reel carrier while other suffixes may denote different quantities. Confirm that the component meets the necessary IATF 16949 manufacturing standards if your application requires specific automotive change control protocols. Ensure compatibility with RoHS 3 and halogen-free requirements during the procurement process.

Selection Notes

Select this component when a compact P-channel MOSFET is required for automotive-grade designs. The low RDS(ON) minimizes conduction losses, while the small form factor supports high-density PCB layouts. Verify that the continuous and pulsed current ratings align with the specific load requirements of the target circuit design.

Part Context

This part belongs to Diodes Incorporated's portfolio of automotive-qualified power MOSFETs. It is designed to meet stringent industry standards, ensuring reliability in demanding environments. The device is manufactured in IATF 16949 certified facilities, supporting its use in critical automotive systems where consistent quality and traceability are mandatory.

Replacement Considerations

Check datasheets for alternative P-channel MOSFETs with similar BVDSS and RDS(ON) specifications. Ensure any substitute maintains the same PowerDI3333-8 package dimensions and pinout configuration to guarantee mechanical compatibility without requiring PCB redesign.