DMP3021SPSW-13

DMP3021SPSW-13

$0.21
  • Description:MOSFET BVDSS: 25V~30V PowerDI506
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Bulk

SKU:ac877da16a67 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET BVDSS: 25V~30V PowerDI506
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Bulk
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:10.6A (Ta), 52.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):5V, 10V
  • Rds On (Max) @ Id, Vgs:15mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:34 nC @ 10 V
  • Vgs (Max):±25V
  • Input Capacitance (Ciss) (Max) @ Vds:1799 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):1.8W (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount, Wettable Flank
  • Supplier Device Package:PowerDI5060-8 (Type UX)
  • Package / Case:8-PowerTDFN

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DMP3021SPSW-13

Overview

The DMP3021SPSW-13 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source voltage (BVDSS) of -30V and a maximum continuous drain current (ID) of -52.7A at TC = +25°C. The static drain-source on-resistance (RDS(on)) is specified as 15mΩ max at VGS = -10V and 25mΩ max at VGS = -5V. Total gate charge (Qg) is 17.4nC at VGS = -5V and 34nC at VGS = -10V. Operating temperature range spans from -55°C to +150°C.

Feature Summary

  • Designed for high efficiency power management applications by minimizing on-state resistance while maintaining superior switching performance.
  • Features a low profile package with a height under 1.1mm, making it suitable for thin electronic designs.
  • Totally lead-free and fully RoHS compliant, also halogen and antimony free.

Applications

  • DC-DC converters
  • Power management functions
  • Analog switches

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel carrier configuration containing 2,500 units per reel. Confirm that the component meets the required environmental standards, specifically RoHS compliance and Halogen/Antimony-free status, if mandated by your design specifications. Ensure the selected package type matches the PCB footprint requirements for the PowerDI5060-8 form factor.

Selection Notes

Select this component when a P-channel MOSFET with a -30V rating and low RDS(on) is required for space-constrained designs. The PowerDI5060-8 package provides a compact solution with a profile under 1.1mm. Consider the thermal resistance values and maximum current ratings relative to your system's operating temperature and load conditions to ensure adequate heat dissipation without exceeding junction limits.

Part Context

This part belongs to the DMP3021 series of P-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes the PowerDI5060-8 surface-mount package technology, which integrates multiple drain connections to improve thermal performance and current handling capabilities compared to standard packages.

Replacement Considerations

Consult official Diodes Incorporated documentation or authorized distributors for verified substitute part numbers. Do not assume cross-compatibility based solely on similar electrical parameters such as voltage or current ratings.

FAQ

What is the maximum continuous drain current at a case temperature of +25°C?

The maximum continuous drain current (ID) is -52.7A when the case temperature (TC) is maintained at +25°C.

Does the device include internal protection features?

Yes, the internal schematic indicates the presence of an integrated ESD protected gate protection diode.

DMP3021SPSW-13DMP3021SPSW-13
$0.21
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