ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V U-DFN2020-
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：8.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：19mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2.6V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：20 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：1031 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.3W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type F)
- Package / Case：6-UDFN Exposed Pad
Download product information
Overview
The DMP3025SFDF-13 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a U-DFN2020-6 (Type F) surface-mount package. It features a drain-source voltage rating of -30V and a maximum continuous drain current of -8.6A at +25°C. The device offers a low on-resistance of 19mΩ at VGS = -10V and 30mΩ at VGS = -5V. Operating within a temperature range of -55°C to +150°C, it includes an integrated ESD protected gate and meets RoHS compliance standards.
Feature Summary
- Low profile 0.6mm package designed for space-constrained applications
- Integrated electrostatic discharge protection on the gate terminal
- Optimized for high efficiency power management with minimized on-state resistance
Applications
- Battery management systems
- DC-DC converters
- General power management functions
Procurement Notes
Verify component authenticity through authorized distribution channels. Confirm that the specific ordering suffix matches the required tape and reel quantity. Ensure design compatibility with the U-DFN2020-6 footprint and pad layout specifications provided in the datasheet before finalizing procurement orders.
Selection Notes
Select this component when a compact P-channel MOSFET with low on-resistance is required for efficient power switching. Consider the thermal characteristics and junction-to-ambient resistance values when designing heat dissipation strategies for the target application environment.
Part Context
This part belongs to the DMP3025 series of P-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. The series focuses on providing superior switching performance alongside minimized on-state resistance for modern electronic designs requiring reliable power control solutions.
Replacement Considerations
Consult official manufacturer documentation for verified equivalent parts. Cross-referencing requires matching electrical parameters, package dimensions, and thermal characteristics to ensure functional compatibility without redesigning the circuit board.
