DMP3025SFDF-7

$0.18

Description：MOSFET BVDSS: 25V~30V U-DFN2020-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:ef521d4af5f0 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET BVDSS: 25V~30V U-DFN2020-
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：8.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：19mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：2.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：20 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：1031 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.3W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMP3025SFDF-7

Overview

The DMP3025SFDF-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source breakdown voltage and a maximum continuous drain current of -8.6A at +25°C. The device offers a low on-resistance of 19mΩ at VGS = -10V and 30mΩ at VGS = -5V. Packaged in a U-DFN2020-6 (Type F) surface-mount footprint with a 0.6mm profile, it supports an operating temperature range from -55°C to +150°C.

Feature Summary

Designed to minimize on-state resistance while maintaining superior switching performance for high efficiency power management applications.
Features a low gate threshold voltage and ESD protected gate structure.
Compliant with RoHS directives and halogen/antimony free standards.

Applications

Battery management systems
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging quantity and carrier type. Confirm that the component meets all applicable environmental compliance requirements for your target market before finalizing procurement specifications.

Selection Notes

Select this component when a compact P-channel MOSFET with low on-resistance is required for space-constrained designs. Ensure the application voltage does not exceed the -30V rating and consider the thermal resistance characteristics for heat dissipation in the intended PCB layout.

Part Context

This part belongs to the DMP series of P-channel enhancement mode MOSFETs from Diodes Incorporated. These devices are engineered for general-purpose switching applications requiring small form factors and efficient power handling capabilities within modern electronic circuits.

Replacement Considerations

Consult the manufacturer's datasheet or authorized distributor databases for verified equivalent parts. Cross-referencing requires matching electrical parameters such as voltage ratings, current capacity, and package dimensions to ensure functional compatibility.