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Product Detailed Parameters
- Description：MOSFET P-CH 30V 10.4A 6UDFN
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：10.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
- Rds On (Max) @ Id, Vgs：19mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id：3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：19.6 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：1204 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：U-DFN2020-6 (Type E)
- Package / Case：6-PowerUDFN
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Overview
The DMP3026SFDE-7 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a U-DFN2020-6 (Type E) surface-mount package. It features a drain-source voltage of -30V and a maximum on-resistance of 19mΩ at VGS = -10V. The device supports a continuous drain current of -8.7A at +25°C and up to -10.4A for short pulses. With a low gate threshold voltage and integrated ESD protection, it is designed for high-efficiency power management applications.
Feature Summary
- Low profile case design suitable for space-constrained applications
- Integrated electrostatic discharge protection on the gate terminal
- Optimized for minimal on-state resistance while maintaining switching performance
Applications
- Battery management systems
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging quantities and reel specifications. Ensure that the component meets all relevant environmental compliance standards required for the target assembly process. Cross-reference the datasheet revision number to guarantee access to the most current electrical characteristics and mechanical dimensions before finalizing procurement orders.
Selection Notes
Select this component when a compact P-channel MOSFET with low on-resistance is required for efficient power switching. Consider the thermal resistance values and package size constraints during circuit layout planning. Evaluate the gate charge parameters to ensure compatibility with the driving circuitry for optimal switching speeds and efficiency in the intended application environment.
Part Context
This part belongs to the DMP3026 series of P-channel MOSFETs manufactured by Diodes Incorporated. It utilizes a U-DFN2020-6 package, which provides a small footprint and low thermal resistance. The series is designed to meet JEDEC standards for high reliability and is available in lead-free, halogen-free, and antimony-free configurations for environmentally compliant manufacturing.
Replacement Considerations
For automotive applications requiring specific change control or AEC-Q qualification, consult the related automotive grade parts with Q-suffixes listed in the manufacturer's product documentation.
