DMP3026SFDF-7

$0.64

Description：MOSFET P-CH 30V 10.3A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:4e7f2eb9b2a6 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 10.3A 6UDFN
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：10.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4V, 10V
Rds On (Max) @ Id, Vgs：19mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id：3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：19.6 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：1204 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：2W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMP3026SFDF-7

Overview

The DMP3026SFDF-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a U-DFN2020-6 (Type F) surface-mount package with a 0.6mm profile. The device has a drain-source voltage rating of -30V and a continuous drain current of -8.6A at +25°C. The maximum on-resistance is 19mΩ at VGS = -10V and 45mΩ at VGS = -4.5V. Total gate charge is 19.6nC at VGS = -10V. Operating temperature range spans from -55°C to +150°C.

Feature Summary

Designed for high efficiency power management applications with minimized on-state resistance and superior switching performance.
Features an ultra-low 0.6mm profile, making it suitable for low-profile electronic designs.
Includes ESD protection on the gate terminal.
Compliant with RoHS standards and is halogen and antimony free.

Applications

Battery Management Systems
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3,000-unit tape and reel packaging configuration. Confirm that the U-DFN2020-6 (Type F) case outline matches the required PCB footprint dimensions. Ensure the component meets the necessary environmental compliance requirements for the target assembly process.

Selection Notes

Select this component when a compact P-channel MOSFET with low on-resistance is required for space-constrained designs. Consider the -30V breakdown voltage and thermal characteristics for appropriate heat dissipation in the application environment. Verify gate drive voltage compatibility with the specified threshold and on-resistance parameters.

Part Context

This part belongs to the DMP series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It utilizes silicon technology and is housed in a lead-free, green molding compound case. The product is qualified to JEDEC standards for high reliability.