DMP3027LFDF-7

$0.11

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:57492fa87501 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：IC
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：25mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：21.8 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1142 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.4W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：U-DFN2020-6 (Type F)
Package / Case：6-UDFN Exposed Pad

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DMP3027LFDF-7

Overview

The DMP3027LFDF-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a maximum drain-source voltage (BVDSS) of -30V and a continuous drain current (ID) of -8.5A at +25°C. The device offers a maximum on-resistance (RDS(ON)) of 25mΩ at VGS = -10V and 38mΩ at VGS = -4.5V. Total gate charge (Qg) is 21.8nC at VGS = -10V. It operates within a temperature range of -55°C to +150°C and is housed in a U-DFN2020-6 package.

Feature Summary

Low gate threshold voltage for efficient drive requirements
Minimized on-state resistance combined with superior switching performance
Totally lead-free, fully RoHS compliant, and halogen/antimony free

Applications

General-purpose interfacing switches
Power-management functions

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm that the component meets all applicable environmental directives, including RoHS 2 and RoHS 3 compliance standards. Ensure the selected part number aligns with the required package type and marking codes specified in the manufacturer's documentation.

Selection Notes

Select this component for applications requiring a compact P-channel solution with low conduction losses. Evaluate thermal management requirements based on the junction-to-ambient thermal resistance values provided in the datasheet. Consider the gate charge characteristics when designing driver circuits to optimize switching speeds and minimize power dissipation during transitions.

Part Context

This component belongs to the DMP3027LFDF series of P-channel MOSFETs from Diodes Incorporated. It utilizes the U-DFN2020-6 (Type F) surface-mount package. The product line is designed to balance low on-resistance with fast switching capabilities for modern power management systems.