DMP3028LPSQ-13

$0.79

Description：MOSFET P-CH 30V 21A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:abd9d928c0f0 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 21A PWRDI5060-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：28mOhm @ 7A, 10V
Vgs(th) (Max) @ Id：2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：22 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：1372 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.28W
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PowerDI5060-8
Package / Case：8-PowerTDFN

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DMP3028LPSQ-13

Overview

The DMP3028LPSQ-13 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI5060-8 package. It features a drain-source voltage (V_DSS) of -30 V and a continuous drain current (I_D) of -21 A at TC = +25°C. The maximum on-resistance (R_DS(ON)) is 28 mΩ at V_GS = -10 V and 38 mΩ at V_GS = -4.5 V. The device supports an operating temperature range from -55°C to +150°C and is qualified to AEC-Q101 standards.

Feature Summary

Low R_DS(ON) minimizes on-state losses for improved efficiency.
Small form factor thermally efficient package enables higher density end products.
100% unclamped inductive switching ensures more reliability.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging configuration containing 2,500 units per reel. Confirm that the component meets automotive PPAP requirements if intended for such applications. Ensure compatibility with the specified PowerDI5060-8 footprint during PCB layout design.

Selection Notes

Select this component for designs requiring a compact P-channel MOSFET with low on-resistance. Consider the -30 V rating and -21 A current capability for power management circuits. Verify thermal performance against the junction-to-case resistance values provided in the datasheet for your specific mounting conditions.

Part Context

This part belongs to the DMP series of automotive-grade MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is designed to meet stringent automotive reliability standards. The PowerDI5060-8 package provides a balance between electrical performance and board space efficiency.

Replacement Considerations

Consult official manufacturer substitution lists or cross-reference databases for verified equivalent parts. Do not assume functional interchangeability based solely on similar voltage or current ratings without verifying pinout and thermal characteristics.