DMP3035SFG-7

$0.14

Description：MOSFET P-CH 30V 8.5A PWRDI3333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)

SKU:9a918db413a9 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P-CH 30V 8.5A PWRDI3333-8
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
Rds On (Max) @ Id, Vgs：20mOhm @ 8A, 10V
Vgs(th) (Max) @ Id：2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：17 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：1633 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：950mW (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：POWERDI3333-8
Package / Case：8-PowerVDFN

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DMP3035SFG-7

Overview

The DMP3035SFG-7 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 surface-mount package. It features a drain-source voltage (VDS) of -30 V and a maximum continuous drain current (ID) of -9.5 A at VGS = -10 V. The device exhibits a static drain-source on-resistance (RDS(ON)) of 20 mΩ at VGS = -10 V and 29 mΩ at VGS = -5 V. Total gate charge (Qg) is 17 nC at VGS = -4.5 V. Operating temperature ranges from -55 °C to +150 °C.

Feature Summary

Designed for high efficiency power management applications with minimized on-state resistance.
Small form factor thermally efficient package enables higher density end products.
Occupies just 33% of the board area occupied by SO-8 enabling smaller end product.
Totally lead-free and fully RoHS compliant.

Applications

Backlighting
Power Management Functions
DC-DC Converters

Procurement Notes

Verify component authenticity through authorized channels. Confirm datasheet revision DS35440 Rev. 4-3 matches your requirements. Check for AEC-Q101 qualification status if automotive reliability is needed. Ensure proper handling for ESD-sensitive devices. Review thermal dissipation limits based on PCB layout copper area.

Selection Notes

Select this component for low-voltage DC-DC converter designs requiring compact footprint. Consider RDS(ON) variations between -10 V and -5 V gate drive levels. Evaluate thermal performance under steady-state versus transient conditions. Compare against newer recommended alternatives like DMP3036SFV for updated design needs.

Part Context

Part of the DMP series of P-channel MOSFETs by Diodes Incorporated. Manufactured using silicon technology. Available in tape and reel packaging configurations. Designed for surface mount assembly processes. Complies with environmental directives regarding hazardous substances.

Replacement Considerations

Datasheet explicitly recommends using DMP3036SFV as a replacement. Verify pinout compatibility and electrical parameter alignment before substitution. Consult manufacturer documentation for detailed transition guidelines.