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The DMP3036SFG-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source breakdown voltage and a maximum on-resistance of 20mΩ at VGS=-10V. The device supports a continuous drain current of -8.7A at TA=+25°C and up to -30A at TC=+25°C. Packaged in a PowerDI3333-8 surface-mount format, it operates within a junction temperature range of -55°C to +150°C.
Verify the specific ordering suffix '-13' corresponds to the required tape and reel quantity of 3,000 units. Confirm that the PowerDI3333-8 package dimensions align with the target PCB footprint. Ensure compliance with RoHS and lead-free requirements if applicable to the final assembly standards.
Select this component when a compact P-channel solution is required for low-voltage applications. The PowerDI3333-8 package offers significant board space savings compared to traditional SO-8 packages while maintaining thermal efficiency. Evaluate the -30V rating against system voltage peaks to ensure adequate margin.
This part belongs to the DMP3036 series of P-channel enhancement mode MOSFETs from Diodes Incorporated. The series is designed to balance low on-resistance with fast switching speeds. The 'SFG' designation indicates the specific PowerDI3333-8 package configuration used for surface mount technology.
Check for automotive-grade alternatives with a Q-suffix if AEC-Q100 qualification or IATF 16949 manufacturing is required. Verify pinout compatibility before substituting with other -30V P-channel MOSFETs in the same package family.
The absolute maximum rating for Gate-Source Voltage (VGSS) is ±25V.
The PowerDI3333-8 package occupies just 33% of the board area compared to an SO-8 package.