DMP3036SFG-13

DMP3036SFG-13

$0.70
  • Description:MOSFET P-CH 30V 8.7A PWRDI3333-8
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:2be9e217e2c1 Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET P-CH 30V 8.7A PWRDI3333-8
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:8.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):5V, 10V
  • Rds On (Max) @ Id, Vgs:20mOhm @ 8A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:16.5 nC @ 10 V
  • Vgs (Max):±25V
  • Input Capacitance (Ciss) (Max) @ Vds:1931 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):950mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:POWERDI3333-8
  • Package / Case:8-PowerVDFN

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DMP3036SFG-13

Overview

The DMP3036SFG-13 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source breakdown voltage and a maximum on-resistance of 20mΩ at VGS=-10V. The device supports a continuous drain current of -8.7A at TA=+25°C and up to -30A at TC=+25°C. Packaged in a PowerDI3333-8 surface-mount format, it operates within a junction temperature range of -55°C to +150°C.

Feature Summary

  • Low on-state resistance minimizes conduction losses for high-efficiency power management.
  • Small form factor package enables higher density end products with reduced board area.
  • Superior switching performance combined with low input capacitance.

Applications

  • Backlighting
  • Power-management functions
  • DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-13' corresponds to the required tape and reel quantity of 3,000 units. Confirm that the PowerDI3333-8 package dimensions align with the target PCB footprint. Ensure compliance with RoHS and lead-free requirements if applicable to the final assembly standards.

Selection Notes

Select this component when a compact P-channel solution is required for low-voltage applications. The PowerDI3333-8 package offers significant board space savings compared to traditional SO-8 packages while maintaining thermal efficiency. Evaluate the -30V rating against system voltage peaks to ensure adequate margin.

Part Context

This part belongs to the DMP3036 series of P-channel enhancement mode MOSFETs from Diodes Incorporated. The series is designed to balance low on-resistance with fast switching speeds. The 'SFG' designation indicates the specific PowerDI3333-8 package configuration used for surface mount technology.

Replacement Considerations

Check for automotive-grade alternatives with a Q-suffix if AEC-Q100 qualification or IATF 16949 manufacturing is required. Verify pinout compatibility before substituting with other -30V P-channel MOSFETs in the same package family.

FAQ

What is the maximum gate-source voltage rating?

The absolute maximum rating for Gate-Source Voltage (VGSS) is ±25V.

How does the package affect board space?

The PowerDI3333-8 package occupies just 33% of the board area compared to an SO-8 package.

DMP3036SFG-13DMP3036SFG-13
$0.70
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