ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：MOSFET P-CH 30V 8.7A PWRDI3333-8
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：8.7A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：5V, 10V
- Rds On (Max) @ Id, Vgs：20mOhm @ 8A, 10V
- Vgs(th) (Max) @ Id：2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：16.5 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：1931 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：950mW (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：POWERDI3333-8
- Package / Case：8-PowerVDFN
Download product information
Overview
The DMP3036SFG-7 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 surface-mount package. It features a drain-source voltage (V_DSS) of -30 V and a gate-source voltage (V_GSS) rating of ±25 V. The device offers a maximum on-resistance (R_DS(ON)) of 20 mΩ at V_GS = -10 V and 29 mΩ at V_GS = -5 V. Continuous drain current reaches -30 A at case temperature +25 °C or -8.7 A at ambient temperature +25 °C. Total gate charge is 16.5 nC at V_GS = -10 V. Operating junction temperature ranges from -55 °C to +150 °C.
Feature Summary
- Minimizes on-state resistance while maintaining superior switching performance for high-efficiency power management.
- Small form factor thermally efficient package enables higher density end products.
- Occupies just 33% of the board area occupied by SO-8 enabling smaller end product.
Applications
- Backlighting
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 2,000-unit tape and reel carrier configuration as documented in the manufacturer's ordering information. Confirm that the component meets RoHS 2 and RoHS 3 compliance standards, including halogen and antimony-free requirements, if required for your assembly process. Ensure the design accommodates the specified thermal resistance values for the intended mounting conditions.
Selection Notes
Select this component when a compact P-channel MOSFET with low R_DS(ON) is required for space-constrained designs. The PowerDI3333-8 package provides significant board area savings compared to traditional SO-8 packages. Consider the thermal characteristics and continuous drain current ratings relative to the expected operating ambient temperature and PCB copper layout to ensure reliable operation within the specified junction temperature limits.
Part Context
This part belongs to the DMP3036 series of 30V P-channel enhancement mode MOSFETs manufactured by Diodes Incorporated. It utilizes silicon technology and is designed for applications requiring minimized on-state losses. The device is qualified to JEDEC standards for high reliability and is available in lead-free, green packaging compliant with environmental directives.
Replacement Considerations
DMP3036SFG-13
FAQ
What is the maximum continuous drain current at an ambient temperature of +25°C?
The maximum continuous drain current is -8.7 A at an ambient temperature of +25°C when mounted on an FR-4 substrate PC board with minimum recommended pad layout.
What are the typical turn-on and turn-off delay times?
The typical turn-on delay time is 8.2 ns, and the typical turn-off delay time is 65 ns, measured under conditions of V_GS = -10 V, V_DD = -15 V, R_GEN = 3 Ω, and I_D = -10 A.
