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Product Detailed Parameters
- Description：MOSFET P-CH 30V 5.8A 8SO
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：5.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：32mOhm @ 7A, 10V
- Vgs(th) (Max) @ Id：2.4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：19.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：931 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：8-SO
- Package / Case：8-SOIC (0.154", 3.90mm Width)
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Overview
The DMP3037LSS-13 is a single P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a SO-8 surface-mount package and operates with a drain-source voltage of -30V and a gate-source voltage of ±20V. At +25°C, the continuous drain current is rated at -5.8A (TA=+25°C) or -4.6A (TA=+70°C). The maximum on-resistance is 32mΩ at VGS=-10V and 50mΩ at VGS=-4.5V. Key dynamic parameters include an input capacitance of 931pF, total gate charge of 19.3nC, turn-on rise time of 11.5ns, and turn-off fall time of 30.8ns. The device supports junction temperatures from -55°C to +150°C.
Feature Summary
- Low on-state resistance for high efficiency
- Fast switching speed with low input capacitance
- Low input/output leakage characteristics
- Totally lead-free and fully RoHS compliant
Applications
- DC-DC converters
- Power management functions
- Backlighting
Procurement Notes
Verify the specific ordering suffix '-13' corresponds to the Tape & Reel packaging configuration containing 2500 units per carrier. Confirm that the component meets the required environmental standards, specifically RoHS compliance and Halogen/Antimony-free status, as defined by the manufacturer's quality definitions. Ensure the selected part matches the JEDEC qualification requirements if high reliability is necessary for the intended application environment.
Selection Notes
Select this component when a P-channel MOSFET with a -30V rating and SO-8 footprint is required. Evaluate the thermal performance against the specified RθJA values based on the PCB copper area and mounting conditions. Consider the gate threshold voltage range (-1.0V to -2.4V) to ensure compatibility with the driving logic levels in the target circuit design.
Part Context
This component belongs to the DMP3037LSS series of P-channel enhancement mode MOSFETs produced by Diodes Incorporated. It utilizes silicon technology and is housed in a standard SO-8 plastic package. The product line is designed to minimize on-state resistance while maintaining superior switching performance for power management applications.
Replacement Considerations
An automotive-compliant version is available under the separate datasheet for part number DMP3037LSSQ.
FAQ
What are the maximum ratings for pulsed drain current and avalanche energy?
The maximum pulsed drain current is -40A (based on a 10µs pulse with a 1% duty cycle), and the maximum avalanche energy is 15mJ (based on L = 0.1mH).
How does the on-resistance vary with temperature?
The on-resistance increases as the junction temperature rises. Typical curves show higher resistance values at +125°C and +150°C compared to +25°C for a given drain current and gate voltage.
