DMP3045LFVW-13

DMP3045LFVW-13

$0.15
  • Description:MOSFET BVDSS: 25V~30V POWERDI333
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)

SKU:59a7eee07a5b Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET BVDSS: 25V~30V POWERDI333
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:5.7A (Ta), 19.9A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:42mOhm @ 4.9A, 10V
  • Vgs(th) (Max) @ Id:2.1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:13.6 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:782 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):900mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount, Wettable Flank
  • Supplier Device Package:PowerDI3333-8 (SWP) Type UX
  • Package / Case:8-PowerVDFN

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DMP3045LFVW-13

Overview

The DMP3045LFVW-13 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 package. It features a drain-source voltage of -30V and a maximum continuous drain current of -19.9A at TC = +25°C. The device exhibits a static drain-source on-resistance of 42mΩ at VGS = -10V and 65mΩ at VGS = -4.5V. Operating temperatures range from -55°C to +150°C.

Feature Summary

  • Minimizes on-state resistance while maintaining superior switching performance for high-efficiency power management.
  • Small form factor thermally efficient package enables higher density end products.
  • Occupies just 33% of the board area occupied by SO-8 enabling smaller end product.
  • ESD protected gate.

Applications

  • General purpose interfacing switches
  • Power management functions

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packing quantity and carrier type. Confirm RoHS compliance status and environmental declarations directly with the manufacturer or authorized distributors before procurement. Ensure the component meets all applicable automotive or industrial qualification requirements if intended for such environments.

Selection Notes

Select this component when space constraints are critical due to its compact PowerDI3333-8 footprint. Evaluate thermal dissipation capabilities based on the application's ambient temperature and PCB copper layout. Consider the low on-resistance characteristics for minimizing conduction losses in high-current DC-DC converter designs.

Part Context

This part belongs to Diodes Incorporated's advanced generation of P-channel MOSFETs designed for high-density applications. It serves as a direct replacement for larger packages like SO-8 where board real estate is limited. The series focuses on balancing low RDS(ON) with robust switching speeds.

Replacement Considerations

For automotive applications requiring specific change control, verify availability of the AEC-Q100 qualified variant (DMP3045LFVWQ). Ensure pinout compatibility and thermal resistance values match the existing design constraints when substituting other 30V P-channel devices.

FAQ

What is the maximum continuous drain current rating?

The maximum continuous drain current is -19.9A at a case temperature of +25°C and -15.9A at +70°C.

Is the device suitable for high-density designs?

Yes, the PowerDI3333-8 package occupies only 33% of the board area compared to an SO-8 package, facilitating smaller end products.

DMP3045LFVW-13DMP3045LFVW-13
$0.15
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