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The DMP3045LFVW-13 is a P-channel enhancement mode MOSFET from Diodes Incorporated, housed in a PowerDI3333-8 package. It features a drain-source voltage of -30V and a maximum continuous drain current of -19.9A at TC = +25°C. The device exhibits a static drain-source on-resistance of 42mΩ at VGS = -10V and 65mΩ at VGS = -4.5V. Operating temperatures range from -55°C to +150°C.
Verify the specific ordering suffix against official documentation to confirm packing quantity and carrier type. Confirm RoHS compliance status and environmental declarations directly with the manufacturer or authorized distributors before procurement. Ensure the component meets all applicable automotive or industrial qualification requirements if intended for such environments.
Select this component when space constraints are critical due to its compact PowerDI3333-8 footprint. Evaluate thermal dissipation capabilities based on the application's ambient temperature and PCB copper layout. Consider the low on-resistance characteristics for minimizing conduction losses in high-current DC-DC converter designs.
This part belongs to Diodes Incorporated's advanced generation of P-channel MOSFETs designed for high-density applications. It serves as a direct replacement for larger packages like SO-8 where board real estate is limited. The series focuses on balancing low RDS(ON) with robust switching speeds.
For automotive applications requiring specific change control, verify availability of the AEC-Q100 qualified variant (DMP3045LFVWQ). Ensure pinout compatibility and thermal resistance values match the existing design constraints when substituting other 30V P-channel devices.
The maximum continuous drain current is -19.9A at a case temperature of +25°C and -15.9A at +70°C.
Yes, the PowerDI3333-8 package occupies only 33% of the board area compared to an SO-8 package, facilitating smaller end products.