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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V TSOT26 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：5.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：42mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：749 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.2W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TSOT-26
- Package / Case：SOT-23-6 Thin, TSOT-23-6
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Overview
The DMP3045LVT-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a TSOT26 package. It features a drain-source voltage (V_DSS) of -30 V and a maximum continuous drain current (I_D) of -5.4 A at +25°C. The device exhibits a low on-state resistance (R_DS(ON)) of 42 mΩ at V_GS = -10 V and 65 mΩ at V_GS = -4.5 V. Electrical characteristics include a gate threshold voltage (V_GS(TH)) ranging from -1 V to -2.1 V, total gate charge (Q_g) of 14.3 nC at V_GS = -10 V, and an input capacitance (C_iss) of 749 pF. Thermal performance specifies a junction-to-ambient thermal resistance (R_θJA) of 104 °C/W under steady state conditions.
Feature Summary
- Low on-resistance design for high efficiency power management applications
- Fast switching speed with low input capacitance
- ESD protected gate structure
- Totally lead-free and fully RoHS compliant
Applications
- Backlighting circuits
- Power management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm packaging quantity and carrier type. Confirm that the component meets all applicable regulatory standards required for the target deployment environment. Ensure compatibility with the intended PCB pad layout and soldering profiles specified in the mechanical data section of the datasheet.
Selection Notes
Select this component when a P-channel MOSFET with a -30 V rating and low R_DS(ON) is required for space-constrained designs utilizing the TSOT26 package. Evaluate the thermal resistance parameters against the expected ambient temperature and duty cycle to ensure safe operation within the specified junction temperature range.
Part Context
This part belongs to the DMP3045LVT series of P-channel enhancement mode MOSFETs produced by Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The device utilizes a molded plastic package material classified as UL Flammability Rating 94V-0.
Replacement Considerations
Consult official manufacturer substitution guides or contact Diodes Incorporated directly for verified alternative part numbers suitable for automotive or industrial applications requiring specific change control.
FAQ
What is the maximum continuous drain current at +25°C?
The maximum continuous drain current is -5.4 A at V_GS = -10 V and +25°C.
Is the device suitable for automotive applications?
For automotive applications requiring specific change control, parts qualified to AEC-Q100/101/200, and PPAP capability, customers must contact Diodes Incorporated or their local representative.
