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Product Detailed Parameters
- Description：MOSFET BVDSS: 25V~30V TSOT26 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：5.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：42mOhm @ 4.9A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：14.3 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：749 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.6W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：TSOT-26
- Package / Case：SOT-23-6 Thin, TSOT-23-6
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Overview
The DMP3045LVTQ-7 is a P-channel enhancement mode MOSFET designed for automotive applications. It features a -30V drain-source voltage and a maximum continuous drain current of -5.4A at +25°C. The device offers a low on-resistance of 42mΩ at VGS = -10V and 65mΩ at VGS = -4.5V. It operates within a temperature range of -55°C to +150°C, dissipates up to 1.6W of power, and utilizes a TSOT26 package.
Feature Summary
- Qualified to AEC-Q101 standards with PPAP capability for automotive use
- Features an ESD protected gate structure
- Compliant with RoHS directives and halogen-free manufacturing requirements
Applications
- Backlighting circuits
- Power-management functions
- DC-DC converters
Procurement Notes
Verify the specific ordering suffix (e.g., -7 or -13) against official Diodes Incorporated documentation to confirm the required packing quantity and carrier type. Ensure that the component selection aligns with the manufacturer's quality definitions for lead-free and green device compliance before finalizing procurement specifications.
Selection Notes
Select this component when designing circuits requiring a single N-channel MOSFET in a compact TSOT26 footprint. Evaluate the thermal resistance characteristics relative to the expected ambient conditions and duty cycles. Confirm that the gate threshold voltage meets the logic drive requirements of the control circuitry for optimal switching performance.
Part Context
This part belongs to the DMP30 series of P-channel MOSFETs manufactured by Diodes Incorporated. The series focuses on providing low on-resistance and fast switching speeds suitable for high-efficiency power management solutions. The TSOT26 package provides a small form factor ideal for space-constrained electronic designs.
Replacement Considerations
Consult official Diodes Incorporated substitution guides for verified alternatives. Cross-reference pinouts, electrical ratings, and package dimensions to ensure compatibility without modifying the existing board layout.
