DMP3050LVT-7

$0.50

Description：MOSFET P CH 30V 4.5A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:27f9c7b0de97 Category: Single FETs, MOSFETs Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET P CH 30V 4.5A TSOT26
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：30 V
Current - Continuous Drain (Id) @ 25°C：4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：50mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：10.5 nC @ 10 V
Vgs (Max)：±25V
Input Capacitance (Ciss) (Max) @ Vds：620 pF @ 15 V
FET Feature：-
Power Dissipation (Max)：1.8W (Ta)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：TSOT-26
Package / Case：SOT-23-6 Thin, TSOT-23-6

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DMP3050LVT-7

Overview

The DMP3050LVT-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a -30V drain-source voltage (BVDSS) and a maximum continuous drain current of -4.5A at +25°C. The device offers a low on-state resistance (RDS(ON)) of 50mΩ at VGS = -10V and 75mΩ at VGS = -4.5V. Packaged in a TSOT26 surface-mount case, it operates within a junction temperature range of -55°C to +150°C with a total power dissipation of 1.6W at +25°C.

Feature Summary

Low on-state resistance for high efficiency power management
Fast switching speed with low input capacitance
Qualified to AEC-Q101 standards for automotive reliability

Applications

Backlighting circuits
Power management functions
DC-DC converters

Procurement Notes

Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm compliance with RoHS directives and halogen-free requirements as specified in the manufacturer's documentation. Ensure the component meets the required thermal and electrical ratings for the intended application environment before finalizing procurement.

Selection Notes

Select this component for applications requiring a single P-channel MOSFET with low RDS(ON) in a compact TSOT26 package. Consider the gate threshold voltage characteristics when designing drive circuits for varying load conditions. Evaluate thermal performance based on the specified junction-to-ambient thermal resistance values under steady-state and transient conditions.

Part Context

This part belongs to the DMP3050LVT series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed to minimize on-state resistance while maintaining superior switching performance. The device utilizes silicon technology and is housed in a molded plastic TSOT26 case with matte tin annealed terminals over a copper leadframe.