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Product Detailed Parameters
- Description：MOSFET P-CH 30V 4.3A SOT23
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR),Cut Tape (CT)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：4.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
- Rds On (Max) @ Id, Vgs：50mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id：2.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：11.8 nC @ 10 V
- Vgs (Max)：±25V
- Input Capacitance (Ciss) (Max) @ Vds：642 pF @ 25 V
- FET Feature：-
- Power Dissipation (Max)：1.38W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：SOT-23-3
- Package / Case：TO-236-3, SC-59, SOT-23-3
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Overview
The DMP3056L-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a SOT23 (Standard) package. It features a drain-source voltage of -30V and a continuous drain current of -4.3A at +25°C. The device exhibits low on-resistance, rated at 50mΩ at VGS=-10V and 70mΩ at VGS=-4.5V. Total power dissipation is 1.38W with a thermal resistance of 91°C/W. Operating temperature ranges from -55°C to +150°C.
Feature Summary
- Designed for high-efficiency power management applications through minimized on-state resistance while maintaining superior switching performance.
- Features low gate threshold voltage and low input capacitance to support fast switching speeds and reduced drive requirements.
- Constructed as a totally lead-free, fully RoHS compliant device that is also halogen and antimony free.
Applications
- High-efficiency power management circuits
- General-purpose load switching applications
Procurement Notes
Verify the specific ordering suffix '-7' corresponds to the 3000-unit tape and reel packaging configuration. Confirm compliance with EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2), and 2015/863/EU (RoHS 3). Ensure the application environment remains within the specified -55°C to +150°C junction temperature range for reliable operation.
Selection Notes
Select this component when a single P-channel MOSFET in a compact SOT23 package is required for low-voltage DC-DC converters or battery-powered systems. Consider the 50mΩ on-resistance at -10V gate drive for optimal efficiency. Evaluate the 1.38W power dissipation limit against the expected thermal conditions of the target PCB layout.
Part Context
This part belongs to the DMP3056L series of 30V P-channel enhancement mode MOSFETs. It is designed to minimize on-state resistance while maintaining fast switching characteristics. The standard SOT23 case provides a compact footprint suitable for space-constrained surface mount designs.
Replacement Considerations
Direct substitutes include other 30V P-channel MOSFETs in SOT23 packages with comparable RDS(ON) and ID ratings. Verify pinout compatibility and thermal resistance specifications before substitution.
FAQ
What is the maximum pulsed drain current for the DMP3056L-7?
The maximum pulsed drain current is -20A, provided the pulse width is less than or equal to 10µS and the duty cycle is less than or equal to 1%.
How does the on-resistance vary with temperature?
The on-resistance increases as the junction temperature rises. Typical curves show normalized resistance increasing significantly from -55°C to +150°C.
