DMP3056LSDQ-13

$0.65

Description：MOSFET 2P-CH 30V 6.9A 8SO
Series：-

SKU:d68d40a73341 Category: FET, MOSFET Arrays Brand: Diodes Incorporated

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Product introduction

Product Detailed Parameters

Description：MOSFET 2P-CH 30V 6.9A 8SO
Series：-
Mfr：Diodes Incorporated
Package：Tape & Reel (TR),Cut Tape (CT)
Technology：MOSFET (Metal Oxide)
Configuration：2 P-Channel (Dual)
FET Feature：-
Drain to Source Voltage (Vdss)：30V
Current - Continuous Drain (Id) @ 25°C：6.9A (Ta)
Rds On (Max) @ Id, Vgs：45mOhm @ 6A, 10V
Vgs(th) (Max) @ Id：2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：13.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds：722pF @ 25V
Power - Max：2.5W
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Surface Mount
Package / Case：8-SOIC (0.154", 3.90mm Width)
Supplier Device Package：8-SO
Grade：Automotive
Qualification：AEC-Q101

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DMP3056LSDQ-13

Overview

The DMP3056LSDQ-13 is a dual P-channel enhancement mode MOSFET in an SO-8 package. It features a drain-source voltage of -30V and continuous drain currents of -6.9A at +25°C and -5.8A at +70°C. The on-resistance is 45mΩ at VGS=-10V and 65mΩ at VGS=-4.5V. Gate threshold voltage ranges from -1V to -2.1V. Total power dissipation is 2.5W with a thermal resistance of 50°C/W. Operating temperature spans -55°C to +150°C.

Feature Summary

Dual P-channel configuration for space-efficient designs
Low on-resistance for high efficiency
Fast switching speed with low input capacitance
Automotive qualified under AEC-Q101 standards

Applications

Power management functions
Backlighting circuits
DC-DC converters

Procurement Notes

Verify the specific suffix Q-13 indicates automotive qualification and tape & reel packaging. Confirm the manufacturer is Diodes Incorporated. Ensure the datasheet revision matches current production standards. Check for RoHS compliance and halogen-free status if required by project specifications.

Selection Notes

Select this component for applications requiring two independent P-channel switches in a single package. Consider the -30V rating and low RDS(ON) for efficient power handling. Verify thermal requirements against the 50°C/W junction-to-ambient resistance. Ensure gate drive voltages align with the specified threshold characteristics.

Part Context

This part belongs to the DMP3056LSD family of dual P-channel MOSFETs. It is designed for high-efficiency power management. The device is manufactured in IATF 16949 certified facilities. It supports automotive applications requiring specific change control protocols.

Replacement Considerations

DMP3056LSD-13 is a non-automotive equivalent. Verify pinout compatibility and electrical parameters before substitution. Ensure the replacement meets all automotive qualification requirements if applicable.