DMP3068L-7

DMP3068L-7

$0.31
  • Description:MOSFET P-CH 30V 3.3A SOT23
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:0510a60b319e Category: Brand:

  
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Product Detailed Parameters

  • Description:MOSFET P-CH 30V 3.3A SOT23
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:P-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):30 V
  • Current - Continuous Drain (Id) @ 25°C:3.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):1.8V, 10V
  • Rds On (Max) @ Id, Vgs:72mOhm @ 4.2A, 10V
  • Vgs(th) (Max) @ Id:1.3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:15.9 nC @ 10 V
  • Vgs (Max):±12V
  • Input Capacitance (Ciss) (Max) @ Vds:708 pF @ 15 V
  • FET Feature:-
  • Power Dissipation (Max):700mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23-3
  • Package / Case:TO-236-3, SC-59, SOT-23-3

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DMP3068L-7

Overview

The DMP3068L-7 is a single P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It utilizes silicon technology and is housed in a standard SOT-23 surface-mount package. The device features a drain-source breakdown voltage of -30 V and a maximum continuous drain current of -3.9 A at +25°C. Its static drain-source on-resistance is specified as 72 mΩ at a gate-source voltage of -10 V, and 85 mΩ at -4.5 V. The total gate charge is 15.9 nC at -10 V. Operating temperatures range from -55°C to +150°C.

Feature Summary

  • Designed to minimize on-state resistance while maintaining superior switching performance for high-efficiency power management applications.
  • Features low gate threshold voltage and low input capacitance to facilitate efficient drive requirements.
  • Constructed with lead-free plating and fully complies with RoHS directives, including being halogen and antimony free.

Applications

  • High-efficiency power management circuits
  • General-purpose load switching applications

Procurement Notes

Verify the specific ordering suffix matches the required packaging quantity, such as the -7 suffix indicating a 3,000-unit tape and reel configuration. Confirm that the component meets all applicable environmental compliance standards relevant to the target market. Ensure the selected part number aligns with the intended thermal and electrical operating conditions defined in the official datasheet specifications.

Selection Notes

Select this component based on its -30 V rating and 72 mΩ on-resistance characteristics suitable for low-voltage DC loads. Consider the SOT-23 package constraints regarding thermal dissipation capabilities when designing the PCB layout. Evaluate the gate threshold voltage requirements against the available control logic levels to ensure reliable turn-on and turn-off transitions under expected operating conditions.

Part Context

This component belongs to the DMP3068 series of P-channel MOSFETs produced by Diodes Incorporated. The series focuses on optimizing the balance between conduction losses and switching speeds. The -7 suffix specifically denotes the standard tape and reel packaging format used for automated assembly processes in manufacturing environments.

Replacement Considerations

Consult the manufacturer's official documentation for verified substitute part numbers within the same product family or equivalent specifications. Cross-reference pin configurations and thermal resistance values to ensure mechanical and electrical compatibility during replacement scenarios.

FAQ

What is the maximum pulsed drain current capability?

The maximum pulsed drain current is -18 A, provided the pulse width does not exceed 10 µs and the duty cycle remains at or below 1%.

How does the on-resistance vary with temperature?

The on-resistance increases as the junction temperature rises. Graphical data in the datasheet illustrates this positive temperature coefficient behavior across the operating range.

DMP3068L-7DMP3068L-7
$0.31
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