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Product Detailed Parameters
- Description：MOSFET P-CH 30V 2.8A TSOT26 T&R
- Series：-
- Mfr：Diodes Incorporated
- Package：Tape & Reel (TR)
- FET Type：P-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：30 V
- Current - Continuous Drain (Id) @ 25°C：2.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On)：2.5V, 10V
- Rds On (Max) @ Id, Vgs：75mOhm @ 4.2A, 10V
- Vgs(th) (Max) @ Id：1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs：7.3 nC @ 4.5 V
- Vgs (Max)：±12V
- Input Capacitance (Ciss) (Max) @ Vds：708 pF @ 15 V
- FET Feature：-
- Power Dissipation (Max)：1.25W (Ta)
- Operating Temperature：-55°C ~ 150°C (TJ)
- Grade：-
- Qualification：-
- Mounting Type：Surface Mount
- Supplier Device Package：TSOT-26
- Package / Case：SOT-23-6 Thin, TSOT-23-6
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Overview
The DMP3068LVT-7 is a P-channel enhancement mode MOSFET manufactured by Diodes Incorporated. It features a TSOT26 surface-mount package and operates with a drain-source voltage of -30V. The device provides a maximum continuous drain current of -2.8A at +25°C. Key electrical parameters include an on-resistance of 75mΩ at VGS=-10V and 105mΩ at VGS=-4.5V. It exhibits low gate threshold voltage and input capacitance, supporting efficient switching performance for power management applications.
Feature Summary
- Low on-state resistance to minimize conduction losses
- Low gate threshold voltage for efficient drive requirements
- Low input capacitance to support superior switching performance
Applications
- General purpose interfacing switch
- Power management functions
Procurement Notes
Verify the specific ordering suffix matches the required packaging quantity. Confirm RoHS compliance status and environmental declarations against current manufacturer definitions. Ensure the component meets the intended thermal and voltage ratings for the target application environment before finalizing procurement.
Selection Notes
Select this component for designs requiring a compact P-channel solution with low RDS(ON) at standard logic levels. Consider the TSOT26 package dimensions for PCB layout constraints. Evaluate thermal dissipation capabilities based on the specified junction-to-ambient resistance values under steady-state conditions.
Part Context
This part belongs to the DMP3068 series of P-channel enhancement mode MOSFETs from Diodes Incorporated. It is designed as a next-generation device focusing on minimizing on-state resistance while maintaining high switching efficiency. The series targets high-efficiency power management circuits in consumer and industrial electronics.
Replacement Considerations
Direct substitutes within the same family include DMP3068L-7. Verify pinout compatibility and electrical parameter equivalence when considering alternative manufacturers or packages.
